MBR12060CTR

GeneSiC Semiconductor MBR12060CTR

Part Number:
MBR12060CTR
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2419876-MBR12060CTR
Description:
DIODE MODULE 60V 120A 2TOWER
ECAD Model:
Datasheet:
MBR12060CTR

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Specifications
GeneSiC Semiconductor MBR12060CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR12060CTR.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2010
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -40°C
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • JESD-30 Code
    R-PUFM-X2
  • Number of Elements
    2
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    3mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    750mV @ 60A
  • Case Connection
    ANODE
  • Forward Current
    120A
  • Max Reverse Leakage Current
    1μA
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    800A
  • Output Current-Max
    60A
  • Application
    POWER
  • Current - Average Rectified (Io)
    120A DC
  • Max Reverse Voltage (DC)
    60V
  • Average Rectified Current
    120A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    60V
  • Diode Configuration
    1 Pair Common Cathode
  • RoHS Status
    RoHS Compliant
Description
MBR12060CTR Overview
An output voltage of 60A is the maximum it can handle.Maintaining a surge current under 800A and not letting it exceed it is the key to preventing it.In this case, the forward voltage has to be set at 120A to operate the device.A reverse voltage peak of 1A is applied to devices like this one.A semiconductor device's maximum reverse leakage current is 1μA, which is the current created by its reverse bias.

MBR12060CTR Features
a maximum output voltage of 60A
a peak voltage of 1A
a reverse voltage peak of 1A


MBR12060CTR Applications
There are a lot of GeneSiC Semiconductor
MBR12060CTR applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR12060CTR More Descriptions
60V 120A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
Schottky Diodes & Rectifiers 60V 120A Schottky Recovery
DIODE MOD SCHOTT 60V 120A 2TOWER
Schottky Rectifier, Comn And, 60V, 120A, 2-Tower; Diode Module Configuration:1 Pair Common Anode; Forward Current If(Av):120A; Forward Voltage Vf Max:750Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:60V
Product Comparison
The three parts on the right have similar specifications to MBR12060CTR.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Diode Element Material
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Max Operating Temperature
    Min Operating Temperature
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Forward Current
    Max Reverse Leakage Current
    Operating Temperature - Junction
    Max Surge Current
    Output Current-Max
    Application
    Current - Average Rectified (Io)
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Diode Configuration
    RoHS Status
    Surface Mount
    JESD-609 Code
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Voltage - DC Reverse (Vr) (Max)
    Rep Pk Reverse Voltage-Max
    JEDEC-95 Code
    Non-rep Pk Forward Current-Max
    Supplier Device Package
    Voltage - Forward (Vf) (Max) @ If:
    Voltage - DC Reverse (Vr) (Max):
    Supplier Device Package:
    Speed:
    Series:
    Packaging:
    Package / Case:
    Operating Temperature - Junction:
    Mounting Type:
    Diode Type:
    Diode Configuration:
    Current - Reverse Leakage @ Vr:
    Current - Average Rectified (Io) (per Diode):
    View Compare
  • MBR12060CTR
    MBR12060CTR
    PRODUCTION (Last Updated: 6 months ago)
    6 Weeks
    Chassis Mount
    Chassis Mount
    Twin Tower
    SILICON
    Bulk
    2010
    yes
    Active
    1 (Unlimited)
    2
    175°C
    -40°C
    UPPER
    UNSPECIFIED
    R-PUFM-X2
    2
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    3mA @ 20V
    750mV @ 60A
    ANODE
    120A
    1μA
    -55°C~150°C
    800A
    60A
    POWER
    120A DC
    60V
    120A
    1
    1A
    60V
    1 Pair Common Cathode
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR10100CT-BP
    -
    12 Weeks
    -
    Through Hole
    TO-220-3
    SILICON
    Bulk
    2007
    yes
    Active
    1 (Unlimited)
    3
    -
    -
    SINGLE
    -
    R-PSFM-T3
    2
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    200μA @ 100V
    850mV @ 5A
    -
    -
    -
    -55°C~150°C
    -
    5A
    EFFICIENCY
    10A
    -
    -
    1
    -
    -
    1 Pair Common Cathode
    ROHS3 Compliant
    NO
    e3
    EAR99
    MATTE TIN
    LOW POWER LOSS
    8541.10.00.80
    NOT SPECIFIED
    NOT SPECIFIED
    MBR10100CT
    3
    Not Qualified
    100V
    80V
    TO-220AB
    120A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR10200CTF-G1
    -
    15 Weeks
    -
    Through Hole
    TO-220-3 Full Pack
    -
    Tube
    2015
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    150μA @ 200V
    950mV @ 5A
    -
    -
    -
    150°C Max
    -
    -
    -
    5A
    -
    -
    -
    -
    -
    1 Pair Common Cathode
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    200V
    -
    -
    -
    TO-220F-3
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR10150CT
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    930mV @ 5A
    150V
    TO-220AB
    Fast Recovery = 200mA (Io)
    -
    Tube
    TO-220-3
    -55°C ~ 150°C
    Through Hole
    Schottky
    1 Pair Common Cathode
    1mA @ 150V
    5A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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