MBR12040CT

GeneSiC Semiconductor MBR12040CT

Part Number:
MBR12040CT
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2419874-MBR12040CT
Description:
DIODE MODULE 40V 120A 2TOWER
ECAD Model:
Datasheet:
MBR12040CT

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Specifications
GeneSiC Semiconductor MBR12040CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR12040CT.
  • Lifecycle Status
    PRODUCTION (Last Updated: 5 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2012
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -40°C
  • HTS Code
    8541.10.00.80
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • JESD-30 Code
    R-PUFM-X2
  • Number of Elements
    2
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    3mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    650mV @ 120A
  • Forward Current
    120A
  • Max Reverse Leakage Current
    1μA
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    800A
  • Output Current-Max
    60A
  • Application
    POWER
  • Current - Average Rectified (Io)
    120A DC
  • Max Reverse Voltage (DC)
    40V
  • Average Rectified Current
    120A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    40V
  • Diode Configuration
    1 Pair Common Cathode
  • RoHS Status
    RoHS Compliant
Description
MBR12040CT Overview
60A is its maximum output voltage.In order to prevent the surge current from exceeding 800A, it should be monitored.There will be no operation of this device when the forward voltage is set to 120A.In devices such as this one, reverse voltage peak is set at 1A.As a reverse biased semiconductor device, its maximal reverse leakage current is 1μA.

MBR12040CT Features
a maximum output voltage of 60A
a peak voltage of 1A
a reverse voltage peak of 1A


MBR12040CT Applications
There are a lot of GeneSiC Semiconductor
MBR12040CT applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR12040CT More Descriptions
40V 120A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
Schottky Diodes & Rectifiers 40V 120A Schottky Recovery
DIODE MOD SCHOTT 40V 120A 2TOWER
SCHOTTKY RECTIFIER, COMN CTHD, 40V, 120A, 2-TOWER; Diode Module Configuration:1 Pair Common Cathode; Forward Current If(AV):120A; Forward Voltage VF Max:650mV; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:40V
Product Comparison
The three parts on the right have similar specifications to MBR12040CT.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Diode Element Material
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    HTS Code
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Forward Current
    Max Reverse Leakage Current
    Operating Temperature - Junction
    Max Surge Current
    Output Current-Max
    Application
    Current - Average Rectified (Io)
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Diode Configuration
    RoHS Status
    Surface Mount
    JESD-609 Code
    Terminal Finish
    Additional Feature
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Voltage - DC Reverse (Vr) (Max)
    Rep Pk Reverse Voltage-Max
    JEDEC-95 Code
    Non-rep Pk Forward Current-Max
    Supplier Device Package
    Voltage - Forward (Vf) (Max) @ If:
    Voltage - DC Reverse (Vr) (Max):
    Supplier Device Package:
    Speed:
    Series:
    Packaging:
    Package / Case:
    Operating Temperature - Junction:
    Mounting Type:
    Diode Type:
    Diode Configuration:
    Current - Reverse Leakage @ Vr:
    Current - Average Rectified (Io) (per Diode):
    View Compare
  • MBR12040CT
    MBR12040CT
    PRODUCTION (Last Updated: 5 months ago)
    6 Weeks
    Chassis Mount
    Chassis Mount
    Twin Tower
    SILICON
    Bulk
    2012
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    175°C
    -40°C
    8541.10.00.80
    UPPER
    UNSPECIFIED
    R-PUFM-X2
    2
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    3mA @ 20V
    650mV @ 120A
    120A
    1μA
    -55°C~150°C
    800A
    60A
    POWER
    120A DC
    40V
    120A
    1
    1A
    40V
    1 Pair Common Cathode
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR10100CT-BP
    -
    12 Weeks
    -
    Through Hole
    TO-220-3
    SILICON
    Bulk
    2007
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    8541.10.00.80
    SINGLE
    -
    R-PSFM-T3
    2
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    200μA @ 100V
    850mV @ 5A
    -
    -
    -55°C~150°C
    -
    5A
    EFFICIENCY
    10A
    -
    -
    1
    -
    -
    1 Pair Common Cathode
    ROHS3 Compliant
    NO
    e3
    MATTE TIN
    LOW POWER LOSS
    NOT SPECIFIED
    NOT SPECIFIED
    MBR10100CT
    3
    Not Qualified
    100V
    80V
    TO-220AB
    120A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR10200CTF-G1
    -
    15 Weeks
    -
    Through Hole
    TO-220-3 Full Pack
    -
    Tube
    2015
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    150μA @ 200V
    950mV @ 5A
    -
    -
    150°C Max
    -
    -
    -
    5A
    -
    -
    -
    -
    -
    1 Pair Common Cathode
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    200V
    -
    -
    -
    TO-220F-3
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR10150CT
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    930mV @ 5A
    150V
    TO-220AB
    Fast Recovery = 200mA (Io)
    -
    Tube
    TO-220-3
    -55°C ~ 150°C
    Through Hole
    Schottky
    1 Pair Common Cathode
    1mA @ 150V
    5A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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