GeneSiC Semiconductor MBR12035CTR
- Part Number:
- MBR12035CTR
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2419888-MBR12035CTR
- Description:
- DIODE MODULE 35V 120A 2TOWER
- Datasheet:
- MBR12035CTR
GeneSiC Semiconductor MBR12035CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR12035CTR.
- Voltage - Forward (Vf) (Max) @ If:650mV @ 120A
- Voltage - DC Reverse (Vr) (Max):35V
- Supplier Device Package:Twin Tower
- Speed:Fast Recovery = 200mA (Io)
- Series:-
- Packaging:Bulk
- Package / Case:Twin Tower
- Mounting Type:Chassis Mount
- Diode Type:Schottky
- Diode Configuration:1 Pair Common Anode
- Current - Reverse Leakage @ Vr:3mA @ 20V
- Current - Average Rectified (Io) (per Diode):120A (DC)
part No. MBR12035CTR Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
MBR12035CTR More Descriptions
35V 120A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
DIODE MOD SCHOTT 35V 120A 2TOWER
SCHOTTKY RECTIFIER, COMN AND, 35V, 120A, 2-TOWER; Diode Module Configuration:1 Pair Common Anode; Forward Current If(AV):120A; Forward Voltage VF Max:650mV; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:35V
DIODE MOD SCHOTT 35V 120A 2TOWER
SCHOTTKY RECTIFIER, COMN AND, 35V, 120A, 2-TOWER; Diode Module Configuration:1 Pair Common Anode; Forward Current If(AV):120A; Forward Voltage VF Max:650mV; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:35V
The three parts on the right have similar specifications to MBR12035CTR.
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ImagePart NumberManufacturerVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Mounting Type:Diode Type:Diode Configuration:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io) (per Diode):Factory Lead TimeMounting TypePackage / CaseSupplier Device PackagePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)SpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfOperating Temperature - JunctionVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Diode ConfigurationRoHS StatusMountWeightDiode Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsElement ConfigurationOutput Current-MaxApplicationForward VoltageMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)JEDEC-95 CodeMax Forward Surge Current (Ifsm)Operating Temperature - Junction:View Compare
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MBR12035CTR650mV @ 120A35VTwin TowerFast Recovery = 200mA (Io)-BulkTwin TowerChassis MountSchottky1 Pair Common Anode3mA @ 20V120A (DC)-------------------------------------------------
-
------------15 WeeksThrough HoleTO-220-3 Full PackTO-220F-3Tube2015Active1 (Unlimited)Fast Recovery =< 500ns, > 200mA (Io)Schottky150μA @ 200V950mV @ 5A150°C Max200V5A1 Pair Common CathodeROHS3 Compliant-------------------------------
-
------------9 WeeksThrough HoleTO-220-3-Tube2014Obsolete1 (Unlimited)Fast Recovery =< 500ns, > 200mA (Io)Schottky100μA @ 60V750mV @ 5A-55°C~150°C--1 Pair Common CathodeROHS3 CompliantThrough Hole2.299997gSILICONAutomotive, AEC-Q101e33EAR99Matte Tin (Sn)150°C-55°CHIGH RELIABILITY8541.10.00.80Rectifier DiodesSINGLENOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSFM-T32Common Cathode5AGENERAL PURPOSE750mV60V5A115mA60VTO-220AB100A-
-
930mV @ 5A150VTO-220ABFast Recovery = 200mA (Io)-TubeTO-220-3Through HoleSchottky1 Pair Common Cathode1mA @ 150V5A------------------------------------------------55°C ~ 150°C
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