MBR12030CTR

GeneSiC Semiconductor MBR12030CTR

Part Number:
MBR12030CTR
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2420040-MBR12030CTR
Description:
DIODE MODULE 30V 120A 2TOWER
ECAD Model:
Datasheet:
MBR12030CTR

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Specifications
GeneSiC Semiconductor MBR12030CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR12030CTR.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis Mount, Through Hole
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2003
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    Solder
  • ECCN Code
    EAR99
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -40°C
  • HTS Code
    8541.10.00.80
  • Pitch
    2mm
  • Terminal Position
    UPPER
  • Orientation
    Right Angle
  • Terminal Form
    UNSPECIFIED
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Contacts
    6
  • Number of Elements
    2
  • Contact Resistance
    20mOhm
  • Element Configuration
    Common Anode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    3mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    650mV @ 60A
  • Forward Current
    60A
  • Max Reverse Leakage Current
    1μA
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    800A
  • Application
    POWER
  • Current - Average Rectified (Io)
    120A DC
  • Forward Voltage
    650mV
  • Max Reverse Voltage (DC)
    30V
  • Average Rectified Current
    120A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    30V
  • Diode Configuration
    1 Pair Common Anode
  • RoHS Status
    RoHS Compliant
Description
MBR12030CTR Overview
This device will operate when the forward voltage is set to 650mV.Surge currents should be monitored and prevented from exceeding 800A.This device will operate when the forward voltage is set to 60A.A reverse voltage peak of 1A is used to power devices like this one.When reverse biased, its maximal reverse leakage current is 1μA, which is the current flowing from that semiconductor device.

MBR12030CTR Features
650mV forward voltage
a peak voltage of 1A
a reverse voltage peak of 1A


MBR12030CTR Applications
There are a lot of GeneSiC Semiconductor
MBR12030CTR applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR12030CTR More Descriptions
30V 120A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
Diode Schottky 30V 120A 3-Pin(3 Tab) Twin Tower
Schottky Rectifier, 30V, 120A, Twin Tower; Repetitive Peak Reverse Voltage:30V; Average Forward Current:60A; Forward Voltage Max:650Mv; Diode Module Configuration:Single; Diode Case Style:Module; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes |Genesic Semiconductor MBR12030CTR
Product Comparison
The three parts on the right have similar specifications to MBR12030CTR.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Diode Element Material
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    HTS Code
    Pitch
    Terminal Position
    Orientation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Contacts
    Number of Elements
    Contact Resistance
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Forward Current
    Max Reverse Leakage Current
    Operating Temperature - Junction
    Max Surge Current
    Application
    Current - Average Rectified (Io)
    Forward Voltage
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Diode Configuration
    RoHS Status
    Supplier Device Package
    Voltage - DC Reverse (Vr) (Max)
    Weight
    Series
    JESD-609 Code
    Terminal Finish
    Additional Feature
    Subcategory
    Reach Compliance Code
    JESD-30 Code
    Output Current-Max
    JEDEC-95 Code
    Max Forward Surge Current (Ifsm)
    Voltage - Forward (Vf) (Max) @ If:
    Voltage - DC Reverse (Vr) (Max):
    Supplier Device Package:
    Speed:
    Series:
    Packaging:
    Package / Case:
    Operating Temperature - Junction:
    Mounting Type:
    Diode Type:
    Diode Configuration:
    Current - Reverse Leakage @ Vr:
    Current - Average Rectified (Io) (per Diode):
    View Compare
  • MBR12030CTR
    MBR12030CTR
    PRODUCTION (Last Updated: 6 months ago)
    6 Weeks
    Chassis Mount, Through Hole
    Chassis Mount
    Twin Tower
    2
    SILICON
    Bulk
    2003
    yes
    Active
    1 (Unlimited)
    2
    Solder
    EAR99
    175°C
    -40°C
    8541.10.00.80
    2mm
    UPPER
    Right Angle
    UNSPECIFIED
    NOT SPECIFIED
    NOT SPECIFIED
    6
    2
    20mOhm
    Common Anode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    3mA @ 20V
    650mV @ 60A
    60A
    1μA
    -55°C~150°C
    800A
    POWER
    120A DC
    650mV
    30V
    120A
    1
    1A
    30V
    1 Pair Common Anode
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR10200CTF-G1
    -
    15 Weeks
    -
    Through Hole
    TO-220-3 Full Pack
    -
    -
    Tube
    2015
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    150μA @ 200V
    950mV @ 5A
    -
    -
    150°C Max
    -
    -
    5A
    -
    -
    -
    -
    -
    -
    1 Pair Common Cathode
    ROHS3 Compliant
    TO-220F-3
    200V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR1060CT-I
    -
    9 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    Tube
    2014
    -
    Obsolete
    1 (Unlimited)
    3
    -
    EAR99
    150°C
    -55°C
    8541.10.00.80
    -
    SINGLE
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    2
    -
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    100μA @ 60V
    750mV @ 5A
    -
    -
    -55°C~150°C
    -
    GENERAL PURPOSE
    -
    750mV
    60V
    5A
    1
    15mA
    60V
    1 Pair Common Cathode
    ROHS3 Compliant
    -
    -
    2.299997g
    Automotive, AEC-Q101
    e3
    Matte Tin (Sn)
    HIGH RELIABILITY
    Rectifier Diodes
    not_compliant
    R-PSFM-T3
    5A
    TO-220AB
    100A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR10150CT
    -
    -
    -
    -
    -
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    -
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    -
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    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    930mV @ 5A
    150V
    TO-220AB
    Fast Recovery = 200mA (Io)
    -
    Tube
    TO-220-3
    -55°C ~ 150°C
    Through Hole
    Schottky
    1 Pair Common Cathode
    1mA @ 150V
    5A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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