GeneSiC Semiconductor MBR12030CTR
- Part Number:
- MBR12030CTR
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2420040-MBR12030CTR
- Description:
- DIODE MODULE 30V 120A 2TOWER
- Datasheet:
- MBR12030CTR
GeneSiC Semiconductor MBR12030CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR12030CTR.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount, Through Hole
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingBulk
- Published2003
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSolder
- ECCN CodeEAR99
- Max Operating Temperature175°C
- Min Operating Temperature-40°C
- HTS Code8541.10.00.80
- Pitch2mm
- Terminal PositionUPPER
- OrientationRight Angle
- Terminal FormUNSPECIFIED
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Contacts6
- Number of Elements2
- Contact Resistance20mOhm
- Element ConfigurationCommon Anode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr3mA @ 20V
- Voltage - Forward (Vf) (Max) @ If650mV @ 60A
- Forward Current60A
- Max Reverse Leakage Current1μA
- Operating Temperature - Junction-55°C~150°C
- Max Surge Current800A
- ApplicationPOWER
- Current - Average Rectified (Io)120A DC
- Forward Voltage650mV
- Max Reverse Voltage (DC)30V
- Average Rectified Current120A
- Number of Phases1
- Peak Reverse Current1A
- Max Repetitive Reverse Voltage (Vrrm)30V
- Diode Configuration1 Pair Common Anode
- RoHS StatusRoHS Compliant
MBR12030CTR Overview
This device will operate when the forward voltage is set to 650mV.Surge currents should be monitored and prevented from exceeding 800A.This device will operate when the forward voltage is set to 60A.A reverse voltage peak of 1A is used to power devices like this one.When reverse biased, its maximal reverse leakage current is 1μA, which is the current flowing from that semiconductor device.
MBR12030CTR Features
650mV forward voltage
a peak voltage of 1A
a reverse voltage peak of 1A
MBR12030CTR Applications
There are a lot of GeneSiC Semiconductor
MBR12030CTR applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
This device will operate when the forward voltage is set to 650mV.Surge currents should be monitored and prevented from exceeding 800A.This device will operate when the forward voltage is set to 60A.A reverse voltage peak of 1A is used to power devices like this one.When reverse biased, its maximal reverse leakage current is 1μA, which is the current flowing from that semiconductor device.
MBR12030CTR Features
650mV forward voltage
a peak voltage of 1A
a reverse voltage peak of 1A
MBR12030CTR Applications
There are a lot of GeneSiC Semiconductor
MBR12030CTR applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR12030CTR More Descriptions
30V 120A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
Diode Schottky 30V 120A 3-Pin(3 Tab) Twin Tower
Schottky Rectifier, 30V, 120A, Twin Tower; Repetitive Peak Reverse Voltage:30V; Average Forward Current:60A; Forward Voltage Max:650Mv; Diode Module Configuration:Single; Diode Case Style:Module; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes |Genesic Semiconductor MBR12030CTR
Diode Schottky 30V 120A 3-Pin(3 Tab) Twin Tower
Schottky Rectifier, 30V, 120A, Twin Tower; Repetitive Peak Reverse Voltage:30V; Average Forward Current:60A; Forward Voltage Max:650Mv; Diode Module Configuration:Single; Diode Case Style:Module; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes |Genesic Semiconductor MBR12030CTR
The three parts on the right have similar specifications to MBR12030CTR.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeMax Operating TemperatureMin Operating TemperatureHTS CodePitchTerminal PositionOrientationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ContactsNumber of ElementsContact ResistanceElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentOperating Temperature - JunctionMax Surge CurrentApplicationCurrent - Average Rectified (Io)Forward VoltageMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Diode ConfigurationRoHS StatusSupplier Device PackageVoltage - DC Reverse (Vr) (Max)WeightSeriesJESD-609 CodeTerminal FinishAdditional FeatureSubcategoryReach Compliance CodeJESD-30 CodeOutput Current-MaxJEDEC-95 CodeMax Forward Surge Current (Ifsm)Voltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Diode Configuration:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io) (per Diode):View Compare
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MBR12030CTRPRODUCTION (Last Updated: 6 months ago)6 WeeksChassis Mount, Through HoleChassis MountTwin Tower2SILICONBulk2003yesActive1 (Unlimited)2SolderEAR99175°C-40°C8541.10.00.802mmUPPERRight AngleUNSPECIFIEDNOT SPECIFIEDNOT SPECIFIED6220mOhmCommon AnodeFast Recovery =< 500ns, > 200mA (Io)Schottky3mA @ 20V650mV @ 60A60A1μA-55°C~150°C800APOWER120A DC650mV30V120A11A30V1 Pair Common AnodeRoHS Compliant---------------------------
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-15 Weeks-Through HoleTO-220-3 Full Pack--Tube2015-Active1 (Unlimited)----------------Fast Recovery =< 500ns, > 200mA (Io)Schottky150μA @ 200V950mV @ 5A--150°C Max--5A------1 Pair Common CathodeROHS3 CompliantTO-220F-3200V------------------------
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-9 WeeksThrough HoleThrough HoleTO-220-3-SILICONTube2014-Obsolete1 (Unlimited)3-EAR99150°C-55°C8541.10.00.80-SINGLE--NOT SPECIFIEDNOT SPECIFIED-2-Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky100μA @ 60V750mV @ 5A---55°C~150°C-GENERAL PURPOSE-750mV60V5A115mA60V1 Pair Common CathodeROHS3 Compliant--2.299997gAutomotive, AEC-Q101e3Matte Tin (Sn)HIGH RELIABILITYRectifier Diodesnot_compliantR-PSFM-T35ATO-220AB100A-------------
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-----------------------------------------------------------930mV @ 5A150VTO-220ABFast Recovery = 200mA (Io)-TubeTO-220-3-55°C ~ 150°CThrough HoleSchottky1 Pair Common Cathode1mA @ 150V5A
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