GeneSiC Semiconductor MBR12030CT
- Part Number:
- MBR12030CT
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2419890-MBR12030CT
- Description:
- DIODE MODULE 30V 120A 2TOWER
- ECAD Model:
-
- Datasheet:
- MBR12030CT
GeneSiC Semiconductor MBR12030CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR12030CT.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount, Through Hole
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingBulk
- Published2012
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSolder
- Max Operating Temperature175°C
- Min Operating Temperature-40°C
- Pitch2mm
- Terminal PositionUPPER
- OrientationRight Angle
- Terminal FormUNSPECIFIED
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Contacts5
- Number of Elements2
- Contact Resistance20mOhm
- Element ConfigurationCommon Cathode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr3mA @ 20V
- Voltage - Forward (Vf) (Max) @ If650mV @ 60A
- Forward Current60A
- Max Reverse Leakage Current1μA
- Operating Temperature - Junction-55°C~150°C
- Max Surge Current800A
- ApplicationPOWER
- Current - Average Rectified (Io)120A DC
- Forward Voltage650mV
- Max Reverse Voltage (DC)30V
- Average Rectified Current120A
- Number of Phases1
- Peak Reverse Current1A
- Max Repetitive Reverse Voltage (Vrrm)30V
- Diode Configuration1 Pair Common Cathode
- Max Forward Surge Current (Ifsm)800A
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
MBR12030CT Overview
When the forward voltage is set to 650mV, this device will operate.Monarrayoring the surge current and preventing array from exceeding 800A should be the rule.When the forward voltage is set to 60A, this device will operate.Devices like this one are powered with a reverse voltage peak of 1A.Its maximal reverse leakage current is 1μA, which is the current from that semiconductor device when the device is reverse biased.
MBR12030CT Features
650mV forward voltage
a peak voltage of 1A
a reverse voltage peak of 1A
MBR12030CT Applications
There are a lot of GeneSiC Semiconductor
MBR12030CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
When the forward voltage is set to 650mV, this device will operate.Monarrayoring the surge current and preventing array from exceeding 800A should be the rule.When the forward voltage is set to 60A, this device will operate.Devices like this one are powered with a reverse voltage peak of 1A.Its maximal reverse leakage current is 1μA, which is the current from that semiconductor device when the device is reverse biased.
MBR12030CT Features
650mV forward voltage
a peak voltage of 1A
a reverse voltage peak of 1A
MBR12030CT Applications
There are a lot of GeneSiC Semiconductor
MBR12030CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR12030CT More Descriptions
30V 120A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
Diode Schottky 30V 120A 3-Pin Twin Tower
Schottky Rectifier, 30V, 120A, Twin Tower; Repetitive Peak Reverse Voltage:30V; Average Forward Current:60A; Forward Voltage Max:650Mv; Diode Module Configuration:Single; Diode Case Style:Module; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes |Genesic Semiconductor MBR12030CT
DIODE, RECTIF, 30V, 120A, TWIN TOWER; Diode Type:Schottky; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):60A; Forward Voltage VF Max:650mV; Forward Surge Current Ifsm Max:800A; Operating Temperature Min:-40°C; Operating Temperature Max:175°C; Diode Case Style:Twin Tower; No. of Pins:2; MSL:-; Operating Temperature Range:-40°C to 175°C
Diode Schottky 30V 120A 3-Pin Twin Tower
Schottky Rectifier, 30V, 120A, Twin Tower; Repetitive Peak Reverse Voltage:30V; Average Forward Current:60A; Forward Voltage Max:650Mv; Diode Module Configuration:Single; Diode Case Style:Module; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes |Genesic Semiconductor MBR12030CT
DIODE, RECTIF, 30V, 120A, TWIN TOWER; Diode Type:Schottky; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):60A; Forward Voltage VF Max:650mV; Forward Surge Current Ifsm Max:800A; Operating Temperature Min:-40°C; Operating Temperature Max:175°C; Diode Case Style:Twin Tower; No. of Pins:2; MSL:-; Operating Temperature Range:-40°C to 175°C
The three parts on the right have similar specifications to MBR12030CT.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationMax Operating TemperatureMin Operating TemperaturePitchTerminal PositionOrientationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ContactsNumber of ElementsContact ResistanceElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentOperating Temperature - JunctionMax Surge CurrentApplicationCurrent - Average Rectified (Io)Forward VoltageMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Diode ConfigurationMax Forward Surge Current (Ifsm)REACH SVHCRoHS StatusSupplier Device PackageVoltage - DC Reverse (Vr) (Max)WeightSeriesJESD-609 CodeECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryReach Compliance CodeJESD-30 CodeOutput Current-MaxJEDEC-95 CodeVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Diode Configuration:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io) (per Diode):View Compare
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MBR12030CTPRODUCTION (Last Updated: 6 months ago)6 WeeksChassis Mount, Through HoleChassis MountTwin Tower2SILICONBulk2012yesActive1 (Unlimited)2Solder175°C-40°C2mmUPPERRight AngleUNSPECIFIEDNOT SPECIFIEDNOT SPECIFIED5220mOhmCommon CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky3mA @ 20V650mV @ 60A60A1μA-55°C~150°C800APOWER120A DC650mV30V120A11A30V1 Pair Common Cathode800ANo SVHCRoHS Compliant---------------------------- -
-15 Weeks-Through HoleTO-220-3 Full Pack--Tube2015-Active1 (Unlimited)--------------Fast Recovery =< 500ns, > 200mA (Io)Schottky150μA @ 200V950mV @ 5A--150°C Max--5A------1 Pair Common Cathode--ROHS3 CompliantTO-220F-3200V-------------------------
-
-9 WeeksThrough HoleThrough HoleTO-220-3-SILICONTube2014-Obsolete1 (Unlimited)3-150°C-55°C-SINGLE--NOT SPECIFIEDNOT SPECIFIED-2-Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky100μA @ 60V750mV @ 5A---55°C~150°C-GENERAL PURPOSE-750mV60V5A115mA60V1 Pair Common Cathode100A-ROHS3 Compliant--2.299997gAutomotive, AEC-Q101e3EAR99Matte Tin (Sn)HIGH RELIABILITY8541.10.00.80Rectifier Diodesnot_compliantR-PSFM-T35ATO-220AB-------------
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------------------------------------------------------------930mV @ 5A150VTO-220ABFast Recovery = 200mA (Io)-TubeTO-220-3-55°C ~ 150°CThrough HoleSchottky1 Pair Common Cathode1mA @ 150V5A
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