GeneSiC Semiconductor MBR12020CTR

Name: MBR12020CTR
Brand: GeneSiC Semiconductor
SKU: 2419877-MBR12020CTR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MBR12020CTR

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 2419877-MBR12020CTR

Description:: DIODE MODULE 20V 120A 2TOWER

ECAD Model:

Datasheet:: MBR12020CTR

Specifications

GeneSiC Semiconductor MBR12020CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR12020CTR.

Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Factory Lead Time
6 Weeks
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Number of Pins
2
Diode Element Material
SILICON
Packaging
Bulk
Published
2012
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
2
Element Configuration
Common Anode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
3mA @ 20V
Voltage - Forward (Vf) (Max) @ If
650mV @ 120A
Forward Current
60A
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
800A
Application
POWER
Current - Average Rectified (Io)
120A DC
Forward Voltage
650mV
Max Reverse Voltage (DC)
20V
Average Rectified Current
120A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
20V
Diode Configuration
1 Pair Common Anode
Max Forward Surge Current (Ifsm)
800A
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant

Description

MBR12020CTR Overview
There will be no operation of this device when the forward voltage is set to 650mV.In order to prevent the surge current from exceeding 800A, it should be monitored.There will be no operation of this device when the forward voltage is set to 60A.In devices such as this one, reverse voltage peak is set at 1A.As a reverse biased semiconductor device, its maximal reverse leakage current is 1μA.

MBR12020CTR Features
650mV forward voltage
a peak voltage of 1A
a reverse voltage peak of 1A

MBR12020CTR Applications
There are a lot of GeneSiC Semiconductor
MBR12020CTR applications of rectifier diode array.

Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification

MBR12020CTR More Descriptions

20V 120A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
Diode Schottky 20V 120A 3-Pin Twin Tower
Schottky Rectifier, 20V, 120A, Twin Tower; Repetitive Peak Reverse Voltage:20V; Average Forward Current:60A; Forward Voltage Max:650Mv; Diode Module Configuration:Single; Diode Case Style:Module; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes |Genesic Semiconductor MBR12020CTR
DIODE, RECTIF, 20V, 120A, TWIN TOWER; Diode Type:Schottky; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:20V; Forward Current If(AV):60A; Forward Voltage VF Max:650mV; Forward Surge Current Ifsm Max:800A; Operating Temperature Min:-40°C; Operating Temperature Max:175°C; Diode Case Style:Twin Tower; No. of Pins:2; MSL:-; Operating Temperature Range:-40°C to 175°C

Product Comparison

The three parts on the right have similar specifications to MBR12020CTR.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

HTS Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Forward Current

Max Reverse Leakage Current

Operating Temperature - Junction

Max Surge Current

Application

Current - Average Rectified (Io)

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Diode Configuration

Max Forward Surge Current (Ifsm)

REACH SVHC

RoHS Status

Surface Mount

JESD-609 Code

Terminal Finish

Additional Feature

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Output Current-Max

Voltage - DC Reverse (Vr) (Max)

Rep Pk Reverse Voltage-Max

JEDEC-95 Code

Non-rep Pk Forward Current-Max

Weight

Series

Subcategory

Reach Compliance Code

Voltage - Forward (Vf) (Max) @ If:

Voltage - DC Reverse (Vr) (Max):

Supplier Device Package:

Speed:

Series:

Packaging:

Package / Case:

Operating Temperature - Junction:

Mounting Type:

Diode Type:

Diode Configuration:

Current - Reverse Leakage @ Vr:

Current - Average Rectified (Io) (per Diode):

View Compare
MBR12020CTR

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Twin Tower

2

SILICON

Bulk

2012

yes

Active

1 (Unlimited)

2

EAR99

175°C

-40°C

8541.10.00.80

UPPER

UNSPECIFIED

NOT SPECIFIED

NOT SPECIFIED

2

Common Anode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

3mA @ 20V

650mV @ 120A

60A

1μA

-55°C~150°C

800A

POWER

120A DC

650mV

20V

120A

1

1A

20V

1 Pair Common Anode

800A

No SVHC

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MBR10100CT-BP

Micro Commercial Co

-

12 Weeks

-

Through Hole

TO-220-3

-

SILICON

Bulk

2007

yes

Active

1 (Unlimited)

3

EAR99

-

-

8541.10.00.80

SINGLE

-

NOT SPECIFIED

NOT SPECIFIED

2

-

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

200μA @ 100V

850mV @ 5A

-

-

-55°C~150°C

-

EFFICIENCY

10A

-

-

-

1

-

-

1 Pair Common Cathode

-

-

ROHS3 Compliant

NO

e3

MATTE TIN

LOW POWER LOSS

MBR10100CT

3

R-PSFM-T3

Not Qualified

5A

100V

80V

TO-220AB

120A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MBR12020CTR vs MBR10100CT-BP
MBR1060CT-I

Diodes Incorporated

-

9 Weeks

Through Hole

Through Hole

TO-220-3

-

SILICON

Tube

2014

-

Obsolete

1 (Unlimited)

3

EAR99

150°C

-55°C

8541.10.00.80

SINGLE

-

NOT SPECIFIED

NOT SPECIFIED

2

Common Cathode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

100μA @ 60V

750mV @ 5A

-

-

-55°C~150°C

-

GENERAL PURPOSE

-

750mV

60V

5A

1

15mA

60V

1 Pair Common Cathode

100A

-

ROHS3 Compliant

-

e3

Matte Tin (Sn)

HIGH RELIABILITY

-

-

R-PSFM-T3

-

5A

-

-

TO-220AB

-

2.299997g

Automotive, AEC-Q101

Rectifier Diodes

not_compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

MBR12020CTR vs MBR1060CT-I
MBR10150CT

SMC Diode Solutions

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

930mV @ 5A

150V

TO-220AB

Fast Recovery = 200mA (Io)

-

Tube

TO-220-3

-55°C ~ 150°C

Through Hole

Schottky

1 Pair Common Cathode

1mA @ 150V

5A

MBR12020CTR vs MBR10150CT