GeneSiC Semiconductor MBR12020CT
- Part Number:
- MBR12020CT
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2419968-MBR12020CT
- Description:
- DIODE MODULE 20V 120A 2TOWER
- ECAD Model:
-
- Datasheet:
- MBR12020CT
GeneSiC Semiconductor MBR12020CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR12020CT.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingBulk
- Published2012
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Max Operating Temperature175°C
- Min Operating Temperature-40°C
- HTS Code8541.10.00.80
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements2
- Element ConfigurationCommon Cathode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr3mA @ 20V
- Voltage - Forward (Vf) (Max) @ If650mV @ 120A
- Forward Current60A
- Max Reverse Leakage Current1μA
- Operating Temperature - Junction-55°C~150°C
- Max Surge Current800A
- ApplicationPOWER
- Current - Average Rectified (Io)120A DC
- Forward Voltage650mV
- Max Reverse Voltage (DC)20V
- Average Rectified Current120A
- Number of Phases1
- Peak Reverse Current1A
- Max Repetitive Reverse Voltage (Vrrm)20V
- Diode Configuration1 Pair Common Cathode
- Max Forward Surge Current (Ifsm)800A
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
MBR12020CT Overview
As long as the forward voltage is set to 650mV, the device will operate.A surge current should be monitored and should not exceed 800A.As long as the forward voltage is set to 60A, the device will operate.There is a reverse voltage peak of 1A on devices like this one.When reverse biased, its maximum reverse leakage current is 1μA, which is the current coming from that semiconductor device.
MBR12020CT Features
650mV forward voltage
a peak voltage of 1A
a reverse voltage peak of 1A
MBR12020CT Applications
There are a lot of GeneSiC Semiconductor
MBR12020CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
As long as the forward voltage is set to 650mV, the device will operate.A surge current should be monitored and should not exceed 800A.As long as the forward voltage is set to 60A, the device will operate.There is a reverse voltage peak of 1A on devices like this one.When reverse biased, its maximum reverse leakage current is 1μA, which is the current coming from that semiconductor device.
MBR12020CT Features
650mV forward voltage
a peak voltage of 1A
a reverse voltage peak of 1A
MBR12020CT Applications
There are a lot of GeneSiC Semiconductor
MBR12020CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR12020CT More Descriptions
20V 120A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
Diode Schottky 20V 120A 3-Pin Twin Tower
Schottky Rectifier, 20V, 120A, Twin Tower; Repetitive Peak Reverse Voltage:20V; Average Forward Current:60A; Forward Voltage Max:650Mv; Diode Module Configuration:Single; Diode Case Style:Module; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes |Genesic Semiconductor MBR12020CT
DIODE, RECTIF, 20V, 120A, TWIN TOWER; Diode Type:Schottky; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:20V; Forward Current If(AV):60A; Forward Voltage VF Max:650mV; Forward Surge Current Ifsm Max:800A; Operating Temperature Min:-40°C; Operating Temperature Max:175°C; Diode Case Style:Twin Tower; No. of Pins:2; MSL:-; Operating Temperature Range:-40°C to 175°C
Diode Schottky 20V 120A 3-Pin Twin Tower
Schottky Rectifier, 20V, 120A, Twin Tower; Repetitive Peak Reverse Voltage:20V; Average Forward Current:60A; Forward Voltage Max:650Mv; Diode Module Configuration:Single; Diode Case Style:Module; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes |Genesic Semiconductor MBR12020CT
DIODE, RECTIF, 20V, 120A, TWIN TOWER; Diode Type:Schottky; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:20V; Forward Current If(AV):60A; Forward Voltage VF Max:650mV; Forward Surge Current Ifsm Max:800A; Operating Temperature Min:-40°C; Operating Temperature Max:175°C; Diode Case Style:Twin Tower; No. of Pins:2; MSL:-; Operating Temperature Range:-40°C to 175°C
The three parts on the right have similar specifications to MBR12020CT.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentOperating Temperature - JunctionMax Surge CurrentApplicationCurrent - Average Rectified (Io)Forward VoltageMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Diode ConfigurationMax Forward Surge Current (Ifsm)REACH SVHCRoHS StatusSurface MountJESD-609 CodeTerminal FinishAdditional FeatureBase Part NumberPin CountJESD-30 CodeQualification StatusOutput Current-MaxVoltage - DC Reverse (Vr) (Max)Rep Pk Reverse Voltage-MaxJEDEC-95 CodeNon-rep Pk Forward Current-MaxSupplier Device PackageWeightSeriesSubcategoryReach Compliance CodeView Compare
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MBR12020CTPRODUCTION (Last Updated: 6 months ago)6 WeeksChassis MountChassis MountTwin Tower2SILICONBulk2012yesActive1 (Unlimited)2EAR99175°C-40°C8541.10.00.80UPPERUNSPECIFIEDNOT SPECIFIEDNOT SPECIFIED2Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky3mA @ 20V650mV @ 120A60A1μA-55°C~150°C800APOWER120A DC650mV20V120A11A20V1 Pair Common Cathode800ANo SVHCRoHS Compliant------------------- -
-12 Weeks-Through HoleTO-220-3-SILICONBulk2007yesActive1 (Unlimited)3EAR99--8541.10.00.80SINGLE-NOT SPECIFIEDNOT SPECIFIED2-Fast Recovery =< 500ns, > 200mA (Io)Schottky200μA @ 100V850mV @ 5A---55°C~150°C-EFFICIENCY10A---1--1 Pair Common Cathode--ROHS3 CompliantNOe3MATTE TINLOW POWER LOSSMBR10100CT3R-PSFM-T3Not Qualified5A100V80VTO-220AB120A-----
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-15 Weeks-Through HoleTO-220-3 Full Pack--Tube2015-Active1 (Unlimited)-----------Fast Recovery =< 500ns, > 200mA (Io)Schottky150μA @ 200V950mV @ 5A--150°C Max--5A------1 Pair Common Cathode--ROHS3 Compliant---------200V---TO-220F-3----
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-9 WeeksThrough HoleThrough HoleTO-220-3-SILICONTube2014-Obsolete1 (Unlimited)3EAR99150°C-55°C8541.10.00.80SINGLE-NOT SPECIFIEDNOT SPECIFIED2Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky100μA @ 60V750mV @ 5A---55°C~150°C-GENERAL PURPOSE-750mV60V5A115mA60V1 Pair Common Cathode100A-ROHS3 Compliant-e3Matte Tin (Sn)HIGH RELIABILITY--R-PSFM-T3-5A--TO-220AB--2.299997gAutomotive, AEC-Q101Rectifier Diodesnot_compliant
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