Fujitsu Electronics America, Inc. MB85R1001ANC-GE1

MB85R1001ANC-GE1 Overview
The package or case of the device is a 48-TFSOP (0.488, 12.40mm Width), which refers to its physical dimensions and shape. The operating temperature range for this device is -40°C to 85°C TA, indicating the range of temperatures within which it can function properly. The packaging for this device is in a tray, which provides a convenient and organized way to store and transport multiple units. This device was published in 2012, indicating its release year. The technology used in this device is FRAM (Ferroelectric RAM), which is a type of memory that combines the advantages of both RAM and non-volatile memory. The voltage supply for this device ranges from 3V to 3.6V, ensuring that it receives the appropriate power for its operation. The interface for this device is parallel, which means that data is transferred in parallel, allowing for faster and more efficient data transfer. The maximum supply voltage for this device is 3.6V, indicating the highest voltage that can be safely supplied to the device. The memory type for this device is non-volatile, meaning that it retains its stored data even when power is removed. The memory interface for this device is also parallel, indicating how data is accessed and stored within the memory.

MB85R1001ANC-GE1 Features
Package / Case: 48-TFSOP (0.488, 12.40mm Width)
48 Pins

MB85R1001ANC-GE1 Applications
There are a lot of Fujitsu Electronics America, Inc. MB85R1001ANC-GE1 Memory applications.

supercomputers
eSRAM
servers
cell phones
main computer memory
networking
personal computers
printers
multimedia computers
Cache memory