M/A-Com Technology Solutions MA4L032-134
- Part Number:
- MA4L032-134
- Manufacturer:
- M/A-Com Technology Solutions
- Ventron No:
- 2438162-MA4L032-134
- Description:
- DIODE PIN CHIP OXIDE
- Datasheet:
- MA4L032-134
M/A-Com Technology Solutions MA4L032-134 technical specifications, attributes, parameters and parts with similar specifications to M/A-Com Technology Solutions MA4L032-134.
- Factory Lead Time6 Weeks
- Package / CaseDie
- Surface MountYES
- Number of Pins2
- Diode Element MaterialSILICON
- Operating Temperature-55°C~125°C TJ
- PackagingBulk
- Published2013
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations1
- Additional FeatureLOW LEAKAGE
- HTS Code8541.10.00.40
- SubcategoryPIN Diodes
- TechnologyPOSITIVE-INTRINSIC-NEGATIVE
- Terminal PositionUPPER
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count2
- JESD-30 CodeS-XUUC-N1
- Qualification StatusNot Qualified
- Number of Elements1
- Max Current Rating100mA
- Element ConfigurationSingle
- Diode TypePIN - Single
- ApplicationLIMITER
- Capacitance @ Vr, F0.15pF @ 0V 1MHz
- Voltage - Peak Reverse (Max)50V
- Breakdown Voltage-Min50V
- Frequency BandHIGH FREQUENCY TO KU B
- Diode Capacitance-Nom0.15pF
- Resistance @ If, F2.5Ohm @ 10mA 500MHz
- Minority Carrier Lifetime-Nom0.015 µs
- Diode Res Test Current10mA
- Diode Res Test Frequency500MHz
- RoHS StatusROHS3 Compliant
MA4L032-134 Overview
The maximum peak reverse voltage for this device is 50V, according to the applicable device specifications.There may be times when this device runs at its lowest possible breakdown voltage, which is 50V.
MA4L032-134 Features
at its lowest breakdown voltage of 50V
MA4L032-134 Applications
There are a lot of M/A-Com Technology Solutions
MA4L032-134 applications of RF diodes.
Radar systems for industrial use
Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
The maximum peak reverse voltage for this device is 50V, according to the applicable device specifications.There may be times when this device runs at its lowest possible breakdown voltage, which is 50V.
MA4L032-134 Features
at its lowest breakdown voltage of 50V
MA4L032-134 Applications
There are a lot of M/A-Com Technology Solutions
MA4L032-134 applications of RF diodes.
Radar systems for industrial use
Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
MA4L032-134 More Descriptions
Product Description Demo for Development.
Diode PIN 50V 100mA 2-Pin ODS-134
RF DIODE PIN 50V CHIP
Diode PIN 50V 100mA 2-Pin ODS-134
RF DIODE PIN 50V CHIP
The three parts on the right have similar specifications to MA4L032-134.
-
ImagePart NumberManufacturerFactory Lead TimePackage / CaseSurface MountNumber of PinsDiode Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureHTS CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsMax Current RatingElement ConfigurationDiode TypeApplicationCapacitance @ Vr, FVoltage - Peak Reverse (Max)Breakdown Voltage-MinFrequency BandDiode Capacitance-NomResistance @ If, FMinority Carrier Lifetime-NomDiode Res Test CurrentDiode Res Test FrequencyRoHS StatusECCN CodeDiode Forward Resistance-MaxMountForward CurrentReverse VoltageRadiation HardeningPeak Reverse CurrentReverse Voltage (DC)Diode Capacitance-MaxView Compare
-
MA4L032-1346 WeeksDieYES2SILICON-55°C~125°C TJBulk2013yesActive1 (Unlimited)1LOW LEAKAGE8541.10.00.40PIN DiodesPOSITIVE-INTRINSIC-NEGATIVEUPPERNO LEADNOT SPECIFIEDNOT SPECIFIED2S-XUUC-N1Not Qualified1100mASinglePIN - SingleLIMITER0.15pF @ 0V 1MHz50V50VHIGH FREQUENCY TO KU B0.15pF2.5Ohm @ 10mA 500MHz0.015 µs10mA500MHzROHS3 Compliant----------
-
8 WeeksDieYES-SILICON-55°C~125°C TJBulk2015yesActive1 (Unlimited)2LOW LEAKAGE8541.10.00.80PIN DiodesPOSITIVE-INTRINSIC-NEGATIVEDUALFLATNOT SPECIFIEDNOT SPECIFIED2S-CDMW-F2Not Qualified1100mA-PIN - SingleLIMITER0.21pF @ 0V 1MHz35V30VHIGH FREQUENCY TO KU B0.175pF2Ohm @ 10mA 500MHz0.02 µs10mA-ROHS3 CompliantEAR992Ohm-------
-
8 WeeksDie-186SILICON-55°C~125°C TJBulk2002yesActive1 (Unlimited)2LOW LEAKAGE8541.10.00.80PIN DiodesPOSITIVE-INTRINSIC-NEGATIVEDUALFLAT--2S-CDMW-F2-1100mASinglePIN - SingleLIMITER-35V-HIGH FREQUENCY TO KU B0.14pF2Ohm @ 10mA 500MHz0.01 µs10mA-ROHS3 Compliant-2OhmSurface Mount100mA20VNo---
-
8 WeeksDie-134SILICON-55°C~125°C TJBulk2013yesActive1 (Unlimited)1LOW LEAKAGE8541.10.00.40PIN DiodesPOSITIVE-INTRINSIC-NEGATIVEUPPER---2S-XUUC-N1-1100mASinglePIN - SingleLIMITER0.18pF @ 0V 1MHz--HIGH FREQUENCY TO KU B0.2pF2.1Ohm @ 10mA 500MHz0.01 µs-500MHzROHS3 CompliantEAR99-Surface Mount10mA35VNo10μA35V0.18pF
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