Texas Instruments LM5110-1MX
- Part Number:
- LM5110-1MX
- Manufacturer:
- Texas Instruments
- Ventron No:
- 3737311-LM5110-1MX
- Description:
- IC DRIVER DUAL 5A NEG VOUT 8SOIC
- ECAD Model:
-
- Datasheet:
- LM5110
Texas Instruments LM5110-1MX technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments LM5110-1MX.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature-40°C~125°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Voltage - Supply3.5V~14V
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)235
- Number of Functions2
- Supply Voltage12V
- Base Part NumberLM5110
- Pin Count8
- Max Output Current5A
- Nominal Supply Current2mA
- Output Current5A
- Max Supply Current2mA
- Propagation Delay40 ns
- Quiescent Current1mA
- Input TypeNon-Inverting
- Rise Time25ns
- Fall Time (Typ)25 ns
- Rise / Fall Time (Typ)14ns 12ns
- Interface IC TypeBUFFER OR INVERTER BASED PERIPHERAL DRIVER
- Channel TypeIndependent
- Number of Drivers2
- Turn On Time0.04 µs
- Output Peak Current Limit-Nom5A
- Driven ConfigurationLow-Side
- Gate TypeN-Channel MOSFET
- Current - Peak Output (Source, Sink)3A 5A
- Logic Voltage - VIL, VIH0.8V 2.2V
- Turn Off Time0.04 µs
- Built-in ProtectionsUNDER VOLTAGE
- Height Seated (Max)1.753mm
- Width3.9mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
LM5110-1MX Overview
This product is currently listed as obsolete and is no longer in production. It has a peak reflow temperature of 235°C and features two functions. The nominal supply current is 2mA and the turn on time is 0.04 µs. The output peak current limit is 5A and the logic voltage for VIL and VIH is 0.8V and 2.2V, respectively. The turn off time is also 0.04 µs. This product is not designed for radiation hardening and is not RoHS compliant. Please note that this product is no longer in production and alternative solutions should be considered.
LM5110-1MX Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
8 pins
Quiescent current of 1mA
LM5110-1MX Applications
There are a lot of Texas Instruments LM5110-1MX gate drivers applications.
High current laser/LED systems
Industrial Modules
Portable Media Players
High-speed communications
Pulse transformer drivers
Active filtering
Motor Control
Power factor correction (PFC) circuits
Broadcast equipment
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
This product is currently listed as obsolete and is no longer in production. It has a peak reflow temperature of 235°C and features two functions. The nominal supply current is 2mA and the turn on time is 0.04 µs. The output peak current limit is 5A and the logic voltage for VIL and VIH is 0.8V and 2.2V, respectively. The turn off time is also 0.04 µs. This product is not designed for radiation hardening and is not RoHS compliant. Please note that this product is no longer in production and alternative solutions should be considered.
LM5110-1MX Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
8 pins
Quiescent current of 1mA
LM5110-1MX Applications
There are a lot of Texas Instruments LM5110-1MX gate drivers applications.
High current laser/LED systems
Industrial Modules
Portable Media Players
High-speed communications
Pulse transformer drivers
Active filtering
Motor Control
Power factor correction (PFC) circuits
Broadcast equipment
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
LM5110-1MX More Descriptions
Dual 5A Compound Gate Driver with Negative Output Voltage Capability 8-SOIC -40 to 125
Tape & Reel (TR) LM5110 Low-Side UNDER VOLTAGE gate driver 25ns -40C~125C TJ 1mA 0.8V 2.2V
MOSFET DRVR 5A 2-OUT Lo Side Non-Inv 8-Pin SOIC N T/R
Tape & Reel (TR) LM5110 Low-Side UNDER VOLTAGE gate driver 25ns -40C~125C TJ 1mA 0.8V 2.2V
MOSFET DRVR 5A 2-OUT Lo Side Non-Inv 8-Pin SOIC N T/R
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