Texas Instruments LM5101BSD
- Part Number:
- LM5101BSD
- Manufacturer:
- Texas Instruments
- Ventron No:
- 3737283-LM5101BSD
- Description:
- IC DRIVER HALF-BRIDGE HV 10WSON
- Datasheet:
- LM5100-01A/B/C
Texas Instruments LM5101BSD technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments LM5101BSD.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case10-WDFN Exposed Pad
- Number of Pins10
- Operating Temperature-40°C~125°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations10
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryMOSFET Drivers
- Voltage - Supply9V~14V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage12V
- Terminal Pitch0.8mm
- Base Part NumberLM5101
- Pin Count10
- Nominal Supply Current2mA
- Output Current2A
- Quiescent Current200μA
- Input TypeNon-Inverting
- Turn On Delay Time4 ns
- Rise Time570ns
- Fall Time (Typ)430 ns
- Turn-Off Delay Time4 ns
- Rise / Fall Time (Typ)570ns 430ns
- Channel TypeIndependent
- Number of Drivers2
- Turn On Time0.056 µs
- Output Peak Current Limit-Nom2A
- Driven ConfigurationHalf-Bridge
- Gate TypeN-Channel MOSFET
- Current - Peak Output (Source, Sink)2A 2A
- High Side DriverYES
- Logic Voltage - VIL, VIH2.3V -
- Turn Off Time0.056 µs
- High Side Voltage - Max (Bootstrap)118V
- Height Seated (Max)0.8mm
- Length4mm
- Width4mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
LM5101BSD Overview
This product features a Surface Mount mounting type and a 10-WDFN Exposed Pad package/case, making it suitable for a variety of applications. With a DUAL terminal position and Non-Inverting input type, it offers versatility and ease of use. The rise time of 570ns ensures fast and efficient operation. Additionally, this product has a peak output current of 2A for both source and sink, providing ample power for demanding tasks. The maximum high side voltage of 118V (Bootstrap) and a seated height of 0.8mm make it a compact and reliable choice. Please note that this product is currently Non-RoHS Compliant.
LM5101BSD Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
10 pins
High-side voltage - Max (Bootstrap) of 118V
Quiescent current of 200μA
LM5101BSD Applications
There are a lot of Texas Instruments LM5101BSD gate drivers applications.
Motor Drives
White Goods - Air Conditioner, Washing Machine,
Video amplifiers
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
Refrigerator
Motor Controls
DC/DC converters
Active filtering
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Dual-Battery Systems
This product features a Surface Mount mounting type and a 10-WDFN Exposed Pad package/case, making it suitable for a variety of applications. With a DUAL terminal position and Non-Inverting input type, it offers versatility and ease of use. The rise time of 570ns ensures fast and efficient operation. Additionally, this product has a peak output current of 2A for both source and sink, providing ample power for demanding tasks. The maximum high side voltage of 118V (Bootstrap) and a seated height of 0.8mm make it a compact and reliable choice. Please note that this product is currently Non-RoHS Compliant.
LM5101BSD Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
10 pins
High-side voltage - Max (Bootstrap) of 118V
Quiescent current of 200μA
LM5101BSD Applications
There are a lot of Texas Instruments LM5101BSD gate drivers applications.
Motor Drives
White Goods - Air Conditioner, Washing Machine,
Video amplifiers
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
Refrigerator
Motor Controls
DC/DC converters
Active filtering
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Dual-Battery Systems
LM5101BSD More Descriptions
2A High Voltage High-Side and Low-Side Gate Driver 10-WSON -40 to 125
DRIVER, MOSFET, HALF BRIDGE, LLP-10; Driver IC type:MOSFET Driver; Case style:LLP; Temperature, operating range:-40°C to 125°C; Base number:5101; Pins, No. of:10; Temp, op. max:125°C; Temp, op. min:-40°C; Termination Type:SMD; Voltage, supply max:100V; Current, output source min:2A
The LM5100A/B/C and LM5101A/B/C High Voltage Gate Drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100V. The "A" versions provide a full 3A of gate drive while the "B" and "C" versions provide 2A and 1A respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C). An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC - 8 pin and the LLP - 10 pin packages.
DRIVER, MOSFET, HALF BRIDGE, LLP-10; Driver IC type:MOSFET Driver; Case style:LLP; Temperature, operating range:-40°C to 125°C; Base number:5101; Pins, No. of:10; Temp, op. max:125°C; Temp, op. min:-40°C; Termination Type:SMD; Voltage, supply max:100V; Current, output source min:2A
The LM5100A/B/C and LM5101A/B/C High Voltage Gate Drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100V. The "A" versions provide a full 3A of gate drive while the "B" and "C" versions provide 2A and 1A respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C). An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC - 8 pin and the LLP - 10 pin packages.
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