Texas Instruments LM5101AM

3A High Voltage High-Side and Low-Side Gate Driver 8-SOIC -40 to 125
MOSFET DRVR 3A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC N Rail
DRIVER, HALF-BRIDGE, 3A, 5101, SOIC8; Device Type:MOSFET; Module Configuration:High Side / Low Side; Peak Output Current:3A; Input Delay:26ns; Output Delay:22ns; Supply Voltage Range:9V to 14V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (19-Dec-2011); Base Number:5101; I / O Delay:26ns; IC Generic Number:5101; Logic Function Number:5101; No. of Outputs:2; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Sink Current:3A; Output Source Current Max:3A; Output Voltage:118.3V; Output Voltage Max:18.3V; Package / Case:SOIC; Supply Voltage Max:100V; Supply Voltage Min:9V; Termination Type:SMD
The LM5100A/B/C and LM5101A/B/C High Voltage Gate Drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100V. The "A" versions provide a full 3A of gate drive while the "B" and "C" versions provide 2A and 1A respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C). An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC - 8 pin and the LLP - 10 pin packages.