Fairchild/ON Semiconductor KSP10BU
- Part Number:
- KSP10BU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2465551-KSP10BU
- Description:
- TRANSISTOR RF NPN 25V TO-92
- Datasheet:
- KSP10BU
Fairchild/ON Semiconductor KSP10BU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSP10BU.
- Lifecycle StatusACTIVE (Last Updated: 11 hours ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight179mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Published2002
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation350mW
- Terminal PositionBOTTOM
- Current Rating100mA
- Frequency650MHz
- Base Part NumberKSP10
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Gain Bandwidth Product650MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 4mA 10V
- Collector Emitter Breakdown Voltage25V
- Transition Frequency650MHz
- Collector Emitter Saturation Voltage500mV
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)3V
- hFE Min60
- Collector-Base Capacitance-Max0.7pF
- Height4.58mm
- Length4.58mm
- Width3.86mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSP10BU Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet KSP10BU or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of KSP10BU. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet KSP10BU or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of KSP10BU. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
KSP10BU More Descriptions
RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92
KSP10 Series 25 V 350 mW Through Hole NPN Epitaxial Silicon Transistor - TO-92
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
25V 350mW 60@4mA10V 650MHz 500mV@4mA400Ã×A NPN 150¡Í@(Tj) TO-92 Bipolar Transistors - BJT ROHS
Bipolar - RF Transistor, NPN, 25 V, 650 MHz, 1 W, 60
Trans RF BJT NPN 25V 350mW 3-Pin TO-92 Bag
TRANS, RF, NPN, 25V, 650MHZ, TO-226AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 650MHz; Power Dissipation Pd: 1W; DC Collector Current: -; DC Current Gain hFE: 60hFE; RF Transistor Case: TO-226AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
KSP10 Series 25 V 350 mW Through Hole NPN Epitaxial Silicon Transistor - TO-92
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
25V 350mW 60@4mA10V 650MHz 500mV@4mA400Ã×A NPN 150¡Í@(Tj) TO-92 Bipolar Transistors - BJT ROHS
Bipolar - RF Transistor, NPN, 25 V, 650 MHz, 1 W, 60
Trans RF BJT NPN 25V 350mW 3-Pin TO-92 Bag
TRANS, RF, NPN, 25V, 650MHZ, TO-226AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 650MHz; Power Dissipation Pd: 1W; DC Collector Current: -; DC Current Gain hFE: 60hFE; RF Transistor Case: TO-226AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
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