JANTXV1N5809

Microsemi Corporation JANTXV1N5809

Part Number:
JANTXV1N5809
Manufacturer:
Microsemi Corporation
Ventron No:
2431252-JANTXV1N5809
Description:
DIODE GEN PURP 100V 3A AXIAL
ECAD Model:
Datasheet:
JANTXV1N5809

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Specifications
Microsemi Corporation JANTXV1N5809 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV1N5809.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    B, Axial
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/477
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    HIGH RELIABILITY, METALLURGICALLY BONDED
  • HTS Code
    8541.10.00.80
  • Terminal Form
    WIRE
  • Pin Count
    2
  • Reference Standard
    MIL-19500
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    5μA @ 100V
  • Voltage - Forward (Vf) (Max) @ If
    875mV @ 4A
  • Case Connection
    ISOLATED
  • Forward Current
    6A
  • Operating Temperature - Junction
    -65°C~175°C
  • Output Current-Max
    3A
  • Application
    ULTRA FAST RECOVERY
  • Forward Voltage
    875mV
  • Max Reverse Voltage (DC)
    100V
  • Average Rectified Current
    3A
  • Number of Phases
    1
  • Reverse Recovery Time
    30 ns
  • Peak Reverse Current
    5μA
  • Max Repetitive Reverse Voltage (Vrrm)
    100V
  • Capacitance @ Vr, F
    65pF @ 10V 1MHz
  • Peak Non-Repetitive Surge Current
    125A
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTXV1N5809 Overview
For this device, the average rectified current is 3A volts.In this case, forward current can reach 6A.3A represents the maximum output current.Based on the data chart, the peak reverse is 5μA.

JANTXV1N5809 Features
an average rectified current of 3A volts
3A is the maximum value
the peak reverse is 5μA


JANTXV1N5809 Applications
There are a lot of Microsemi Corporation
JANTXV1N5809 applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JANTXV1N5809 More Descriptions
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon
Rectifier Diode Switching 100V 6A 30ns 2-Pin Case E Bag
Diode Ultra Fast Recovery 100V 6A 2-Pin Case B Bag
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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