JANTX2N708

Microsemi Corporation JANTX2N708

Part Number:
JANTX2N708
Manufacturer:
Microsemi Corporation
Ventron No:
2470591-JANTX2N708
Description:
TRANS NPN 15V
ECAD Model:
Datasheet:
JANTX2N708

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Specifications
Microsemi Corporation JANTX2N708 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N708.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-206AA, TO-18-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/312
  • Published
    2002
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Power Dissipation
    360mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    360mW
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    15V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 10mA 1V
  • Current - Collector Cutoff (Max)
    25nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 1mA, 10mA
  • Collector Base Voltage (VCBO)
    40V
  • Emitter Base Voltage (VEBO)
    5V
  • Turn Off Time-Max (toff)
    75ns
  • Turn On Time-Max (ton)
    40ns
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX2N708 Overview
DC current gain in this device equals 40 @ 10mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 1mA, 10mA.An emitter's base voltage can be kept at 5V to gain high efficiency.

JANTX2N708 Features
the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA
the emitter base voltage is kept at 5V


JANTX2N708 Applications
There are a lot of Microsemi Corporation
JANTX2N708 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N708 More Descriptions
Trans GP BJT NPN 15V 1.2W 3-Pin TO-18 Bag
Small-Signal BJT _ TO-18
TRANS NPN 15V TO18
JANTX2N708 --
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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