Microsemi Corporation JANTX2N5582
- Part Number:
- JANTX2N5582
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466264-JANTX2N5582
- Description:
- TRANS NPN 50V 0.8A
- ECAD Model:
-
- Datasheet:
- JANTX2N5582
Microsemi Corporation JANTX2N5582 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N5582.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- Contact PlatingLead, Tin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-206AB, TO-46-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/423
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation500mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation500mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage50V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N5582 Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 800mA volts.
JANTX2N5582 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
JANTX2N5582 Applications
There are a lot of Microsemi Corporation
JANTX2N5582 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 800mA volts.
JANTX2N5582 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
JANTX2N5582 Applications
There are a lot of Microsemi Corporation
JANTX2N5582 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N5582 More Descriptions
JANTX Series 50 V 800 mA 500 mW NPN Silicon Switching Transistor - TO-46-3
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-46 Bag
Non-Compliant Through Hole NPN Bulk TO-46-3 3 Lead, Tin
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-46 Bag
Non-Compliant Through Hole NPN Bulk TO-46-3 3 Lead, Tin
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