Microsemi Corporation JANTX2N3792
- Part Number:
- JANTX2N3792
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2464785-JANTX2N3792
- Description:
- TRANS PNP 80V 10A TO-3
- ECAD Model:
-
- Datasheet:
- JANTX2N3792
Microsemi Corporation JANTX2N3792 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3792.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/379
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Power Dissipation5W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation5W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 3A 2V
- Current - Collector Cutoff (Max)5mA
- Vce Saturation (Max) @ Ib, Ic2.5V @ 2A, 10A
- Transition Frequency4MHz
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N3792 Overview
In this device, the DC current gain is 30 @ 3A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 2A, 10A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
JANTX2N3792 Features
the DC current gain for this device is 30 @ 3A 2V
the vce saturation(Max) is 2.5V @ 2A, 10A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
JANTX2N3792 Applications
There are a lot of Microsemi Corporation
JANTX2N3792 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 30 @ 3A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 2A, 10A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
JANTX2N3792 Features
the DC current gain for this device is 30 @ 3A 2V
the vce saturation(Max) is 2.5V @ 2A, 10A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
JANTX2N3792 Applications
There are a lot of Microsemi Corporation
JANTX2N3792 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N3792 More Descriptions
High Power Silicon Transistor PNP 80VDC 10A 2-Pin TO-3
Trans GP BJT PNP 80V 10A 5000mW 3-Pin(2 Tab) TO-3 Tray
Power Bjt To-3 Rohs Compliant: Yes |Microchip JANTX2N3792
Trans GP BJT PNP 80V 10A 5000mW 3-Pin(2 Tab) TO-3 Tray
Power Bjt To-3 Rohs Compliant: Yes |Microchip JANTX2N3792
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