Microsemi Corporation JAN1N5811US
- Part Number:
- JAN1N5811US
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2430558-JAN1N5811US
- Description:
- DIODE GEN PURP 150V 6A B-MELF
- ECAD Model:
-
- Datasheet:
- JAN1N5811US
Microsemi Corporation JAN1N5811US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN1N5811US.
- Lifecycle StatusIN PRODUCTION (Last Updated: 2 weeks ago)
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSQ-MELF, B
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/477
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature175°C
- Min Operating Temperature-65°C
- Additional FeatureHIGH RELIABILITY
- HTS Code8541.10.00.80
- SubcategoryRectifier Diodes
- Terminal PositionEND
- Terminal FormWRAP AROUND
- Pin Count2
- Reference StandardMIL-19500/477
- Qualification StatusQualified
- Number of Elements1
- Power Dissipation-Max5W
- Element ConfigurationSingle
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeStandard
- Current - Reverse Leakage @ Vr5μA @ 150V
- Voltage - Forward (Vf) (Max) @ If875mV @ 4A
- Case ConnectionISOLATED
- Forward Current6A
- Operating Temperature - Junction-65°C~175°C
- Output Current-Max3A
- ApplicationULTRA FAST RECOVERY
- Forward Voltage875mV
- Max Reverse Voltage (DC)150V
- Average Rectified Current6A
- Number of Phases1
- Reverse Recovery Time30 ns
- Peak Reverse Current5μA
- Max Repetitive Reverse Voltage (Vrrm)150V
- Capacitance @ Vr, F60pF @ 10V 1MHz
- Peak Non-Repetitive Surge Current125A
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN1N5811US Overview
Devices like this have an average rectified current of 6A volts.There is no limit to the forward current value.Output current maximum is 3A.On the data sheets, the peak reverse is indicated by the data chart as 5μA.
JAN1N5811US Features
an average rectified current of 6A volts
3A is the maximum value
the peak reverse is 5μA
JAN1N5811US Applications
There are a lot of Microsemi Corporation
JAN1N5811US applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
Devices like this have an average rectified current of 6A volts.There is no limit to the forward current value.Output current maximum is 3A.On the data sheets, the peak reverse is indicated by the data chart as 5μA.
JAN1N5811US Features
an average rectified current of 6A volts
3A is the maximum value
the peak reverse is 5μA
JAN1N5811US Applications
There are a lot of Microsemi Corporation
JAN1N5811US applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JAN1N5811US More Descriptions
Rectifier Diode, 1 Phase, 1 Element, 6A, 150V V(RRM), Silicon
Rectifier Diode Switching 150V 6A 30ns 2-Pin E-MELF Bag
1N5811 Series 150 V 6 A SMT Sealed Ultrafast Recovery Glass Rectifier - MELF-B
DIODE GEN PURP 150V 6A B SQ-MELF
Rectifier Diode Switching 150V 6A 30ns 2-Pin E-MELF Bag
1N5811 Series 150 V 6 A SMT Sealed Ultrafast Recovery Glass Rectifier - MELF-B
DIODE GEN PURP 150V 6A B SQ-MELF
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