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JAN1N5618US

Microsemi Corporation JAN1N5618US

Part Number:
JAN1N5618US
Manufacturer:
Microsemi Corporation
Ventron No:
2430641-JAN1N5618US
Description:
DIODE GEN PURP 600V 1A D5A
ECAD Model:
Datasheet:
JAN1N5618US

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Specifications
Microsemi Corporation JAN1N5618US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN1N5618US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, A
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/429
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    125°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    METALLURGICALLY BONDED
  • HTS Code
    8541.10.00.80
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Pin Count
    2
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    500nA @ 600V
  • Voltage - Forward (Vf) (Max) @ If
    1.3V @ 3A
  • Case Connection
    ISOLATED
  • Operating Temperature - Junction
    -65°C~200°C
  • Output Current-Max
    1A
  • Forward Voltage
    1.3V
  • Max Reverse Voltage (DC)
    600V
  • Average Rectified Current
    1A
  • Reverse Recovery Time
    2 μs
  • Peak Reverse Current
    500nA
  • Max Repetitive Reverse Voltage (Vrrm)
    600V
  • Peak Non-Repetitive Surge Current
    30A
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JAN1N5618US Overview
There is an average rectified current of 1A volts for this device.In terms of output current, 1A is the maximum value.In the datasheets, the peak reverse is 500nA, as indicated by the data chart.

JAN1N5618US Features
an average rectified current of 1A volts
1A is the maximum value
the peak reverse is 500nA


JAN1N5618US Applications
There are a lot of Microsemi Corporation
JAN1N5618US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JAN1N5618US More Descriptions
Rectifier Diode Switching 600V 1A 2000ns 2-Pin A-MELF Bag
Std Rectifier _ A-Body Sq. Melf
DIODE GEN PURP 100V 12A DO203AA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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