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JAN1N5416US

Microsemi Corporation JAN1N5416US

Part Number:
JAN1N5416US
Manufacturer:
Microsemi Corporation
Ventron No:
2430769-JAN1N5416US
Description:
DIODE GEN PURP 100V 3A AXIAL
ECAD Model:
Datasheet:
JAN1N5416US

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Specifications
Microsemi Corporation JAN1N5416US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN1N5416US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount, Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    B, Axial
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/411
  • Published
    1997
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • HTS Code
    8541.10.00.80
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Pin Count
    2
  • Reference Standard
    MIL-19500/411L
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    1μA @ 100V
  • Voltage - Forward (Vf) (Max) @ If
    1.5V @ 9A
  • Case Connection
    ISOLATED
  • Operating Temperature - Junction
    -65°C~175°C
  • Output Current-Max
    3A
  • Application
    FAST RECOVERY POWER
  • Max Reverse Voltage (DC)
    100V
  • Average Rectified Current
    3A
  • Number of Phases
    1
  • Reverse Recovery Time
    150 ns
  • Peak Reverse Current
    1μA
  • Max Repetitive Reverse Voltage (Vrrm)
    100V
  • Peak Non-Repetitive Surge Current
    80A
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JAN1N5416US Overview
In this device, there is an average rectified current of 3A volts.Output current is maximal at 3A.As the data chart indicates, the peak reverse is 1μA.

JAN1N5416US Features
an average rectified current of 3A volts
3A is the maximum value
the peak reverse is 1μA


JAN1N5416US Applications
There are a lot of Microsemi Corporation
JAN1N5416US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JAN1N5416US More Descriptions
Diode Switching 100V 3A 2-Pin E-MELF
UFR,FRR _ B-Body Sq. Melf
Fast Rectifier (100-500ns)
DIODE GEN PURP 1KV 35A DO203AB
DIODE GEN PURP 100V 3A AXIAL
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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