IXYS IXFM15N60

Name: IXFM15N60
Brand: IXYS
SKU: 5524377-IXFM15N60
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXFM15N60

Manufacturer:: IXYS

Ventron No:: 5524377-IXFM15N60

Description:: HIPERFET Power MOSFTETs

ECAD Model:

Datasheet:: IXFH/IXFM(15,20)N60

Specifications

IXYS IXFM15N60 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFM15N60.

Mounting Type
Through Hole
Package / Case
TO-204AE
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HiPerFET™
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
300W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
500m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds
4500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
15A Tc
Gate Charge (Qg) (Max) @ Vgs
170nC @ 10V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
15A
Drain-source On Resistance-Max
0.05Ohm
Pulsed Drain Current-Max (IDM)
60A
DS Breakdown Voltage-Min
600V
RoHS Status
ROHS3 Compliant

Description

IXFM15N60 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 15A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFM15N60 Features
based on its rated peak drain current 60A.
a 600V drain to source voltage (Vdss)

IXFM15N60 Applications
There are a lot of IXYS
IXFM15N60 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

IXFM15N60 More Descriptions

POWER MOSFET TO-3

Certification