Fairchild/ON Semiconductor ISL9R8120S3ST
- Part Number:
- ISL9R8120S3ST
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2434541-ISL9R8120S3ST
- Description:
- DIODE GEN PURP 1.2KV 8A TO263
- ECAD Model:
-
- Datasheet:
- ISL9R8120P2, ISL9R8120S3S
Fairchild/ON Semiconductor ISL9R8120S3ST technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor ISL9R8120S3ST.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight1.31247g
- PackagingTape & Reel (TR)
- SeriesStealth™
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Capacitance30pF
- Voltage - Rated DC1.2kV
- Current Rating8A
- Base Part NumberISL9R8120
- Element ConfigurationSingle
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeStandard
- Current - Reverse Leakage @ Vr100μA @ 1200V
- Power Dissipation71W
- Output Current8A
- Voltage - Forward (Vf) (Max) @ If3.3V @ 8A
- Forward Current8A
- Operating Temperature - Junction-55°C~150°C
- Max Surge Current100A
- Voltage - DC Reverse (Vr) (Max)1200V
- Forward Voltage3.3V
- Max Reverse Voltage (DC)1.2kV
- Average Rectified Current8A
- Reverse Recovery Time300 ns
- Peak Reverse Current100μA
- Max Repetitive Reverse Voltage (Vrrm)1.2kV
- Capacitance @ Vr, F30pF @ 10V 1MHz
- Peak Non-Repetitive Surge Current100A
- Reverse Voltage1.2kV
- Max Forward Surge Current (Ifsm)100A
- Recovery Time44 ns
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
ISL9R8120S3ST Overview
The reverse voltage should be 1.2kV.In this device, there is an average rectified current of 8A volts.An unwanted consequence of the primary action of this electronic or electrical device is the production of 71W heat.Forward current may not exceed 8A.8A is its maximum current rating, which is the maximum current that a fuse can handle without deteriorating.This is the maximum amount of 100A surge current that can be used.Depending on the capacitance, the device may deliver a value of 30pF.As the data chart indicates, the peak reverse is 100μA.
ISL9R8120S3ST Features
an average rectified current of 8A volts
a current rating of 8A
the peak reverse is 100μA
ISL9R8120S3ST Applications
There are a lot of ON Semiconductor
ISL9R8120S3ST applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
The reverse voltage should be 1.2kV.In this device, there is an average rectified current of 8A volts.An unwanted consequence of the primary action of this electronic or electrical device is the production of 71W heat.Forward current may not exceed 8A.8A is its maximum current rating, which is the maximum current that a fuse can handle without deteriorating.This is the maximum amount of 100A surge current that can be used.Depending on the capacitance, the device may deliver a value of 30pF.As the data chart indicates, the peak reverse is 100μA.
ISL9R8120S3ST Features
an average rectified current of 8A volts
a current rating of 8A
the peak reverse is 100μA
ISL9R8120S3ST Applications
There are a lot of ON Semiconductor
ISL9R8120S3ST applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
ISL9R8120S3ST More Descriptions
Diode Ultra Fast Recovery Rectifier 1.2KV 8A 3-Pin (2 Tab) TO-263AB T/R
FAST DIODE, 8A, 1.2KV, TO-263AB; Diode T; FAST DIODE, 8A, 1.2KV, TO-263AB; Diode Type:Fast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):8A; Forward Voltage VF Max:2.8V; Reverse Recovery Time trr Max:35ns
DIODE, FAST, 8A, 1200V, SMD, D2-PAK; Voltage, Vrrm:1200V; Current, If av:8A; Current, Ifsm:100A; Time, trr typ:25ns; Case style:D2-PAK; Current, Ifs max:100A; Current, forward If:8mA; Diode type:Fast Recovery; Pins, No. of:2; Temperature, Tj max:150°C; Termination Type:SMD; Time, trr max:44ns; Voltage, Vf max:3.1V; Voltage, forward at If:2.8V
The ISL9R18120S3S is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
FAST DIODE, 8A, 1.2KV, TO-263AB; Diode T; FAST DIODE, 8A, 1.2KV, TO-263AB; Diode Type:Fast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):8A; Forward Voltage VF Max:2.8V; Reverse Recovery Time trr Max:35ns
DIODE, FAST, 8A, 1200V, SMD, D2-PAK; Voltage, Vrrm:1200V; Current, If av:8A; Current, Ifsm:100A; Time, trr typ:25ns; Case style:D2-PAK; Current, Ifs max:100A; Current, forward If:8mA; Diode type:Fast Recovery; Pins, No. of:2; Temperature, Tj max:150°C; Termination Type:SMD; Time, trr max:44ns; Voltage, Vf max:3.1V; Voltage, forward at If:2.8V
The ISL9R18120S3S is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
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