Infineon Technologies IRL3705NPBF

Name: IRL3705NPBF
Brand: Infineon Technologies
SKU: 3586205-IRL3705NPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL3705NPBF

Manufacturer:: Infineon Technologies

Ventron No:: 3586205-IRL3705NPBF

Description:: MOSFET N-CH 55V 89A TO-220AB

ECAD Model:

Datasheet:: IRL3705NPBF

Specifications

Infineon Technologies IRL3705NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3705NPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
1997
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
12mOhm
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Current Rating
89A
Lead Pitch
2.54mm
Number of Elements
1
Power Dissipation-Max
170W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
130W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10m Ω @ 46A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3600pF @ 25V
Current - Continuous Drain (Id) @ 25°C
89A Tc
Gate Charge (Qg) (Max) @ Vgs
98nC @ 5V
Rise Time
140ns
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
Fall Time (Typ)
78 ns
Turn-Off Delay Time
37 ns
Continuous Drain Current (ID)
89A
Threshold Voltage
2V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
77A
Drain to Source Breakdown Voltage
55V
Dual Supply Voltage
55V
Recovery Time
140 ns
Nominal Vgs
2 V
Height
8.77mm
Length
10.5156mm
Width
4.69mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRL3705NPBF Description IRL3705NPBF MOSFET utilizes proven silicon processes. Infineon Technologies IRL3705NPBF supports various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery-powered applications. IRL3705NPBF N-Channel MOSFET is available in a variety of surface mount and through-hole packages with industry-standard footprints for ease of design. IRL3705NPBF Features Standard pin-out Wide availability High current capability High performance Industry-standard qualification IRL3705NPBF Applications Battery application DC motors SMPS Lighting load switches Inverters

IRL3705NPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.01Ohm;ID 89A;TO-220AB;PD 170W;VGS /-16V
Transistor NPN Field Effect IRL3705/IRL3705N INTERNATIONAL RECTIFIER Ampere=89 V=55 TO220
Single N-Channel 55 V 0.012 Ohm 98 nC HEXFET® Power Mosfet - TO-220-3
INFINEON THT MOSFET NFET 55V 89A 10mΩ 150°C TO-220 IRL3705NPBF
MOSFET, 55V, 77A, 10 MOHM, 65.3 NC QG, LOGIC LEVEL, TOPower Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:89A; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
MOSFET, N LOGIC TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:77A; Drain Source Voltage Vds:55V; On Resistance Rds(on):10mohm; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:89A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:310A; Voltage Vgs th Max:2.5V

Certification