Infineon Technologies IRG4PH40UPBF

Name: IRG4PH40UPBF
Brand: Infineon Technologies
SKU: 2494658-IRG4PH40UPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRG4PH40UPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2494658-IRG4PH40UPBF

Description:: IGBT 1200V 41A 160W TO247AC

ECAD Model:

Datasheet:: IRG4PH40UPBF

Specifications

Infineon Technologies IRG4PH40UPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4PH40UPBF.

Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2000
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
1.2kV
Max Power Dissipation
160W
Current Rating
41A
Number of Elements
1
Element Configuration
Single
Power Dissipation
160W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
24 ns
Transistor Application
POWER CONTROL
Rise Time
18ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
220 ns
Collector Emitter Voltage (VCEO)
3.1V
Max Collector Current
41A
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.43V
Turn On Time
49 ns
Test Condition
960V, 21A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.1V @ 15V, 21A
Turn Off Time-Nom (toff)
690 ns
Gate Charge
86nC
Current - Collector Pulsed (Icm)
82A
Td (on/off) @ 25°C
24ns/220ns
Switching Energy
1.04mJ (on), 3.4mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
3V
Fall Time-Max (tf)
190ns
Height
20.3mm
Length
15.875mm
Width
5.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRG4PH40UPBF Overview
This product is manufactured by Infineon Technologies and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet IRG4PH40UPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRG4PH40UPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IRG4PH40UPBF More Descriptions

Trans IGBT Chip N-CH 1200V 41A 160000mW 3-Pin(3 Tab) TO-247AC Tube
1200V ULTRAFAST 5-40 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PH40UPBF
IRG4PH40U Series 1200 V 21 A N-Channel UltraFast Speed IGBT - TO-247AC
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.43 V Current release time: 180 ns Power dissipation: 160 W
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40U; Fall Time Max:190ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

Product Comparison

The three parts on the right have similar specifications to IRG4PH40UPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Turn On Delay Time

Transistor Application

Rise Time

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Base Part Number

Power - Max

Current - Collector (Ic) (Max)

Weight

JESD-609 Code

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

View Compare
IRG4PH40UPBF

Infineon Technologies

14 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Bulk

2000

Last Time Buy

1 (Unlimited)

3

Through Hole

EAR99

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

1.2kV

160W

41A

1

Single

160W

COLLECTOR

Standard

24 ns

POWER CONTROL

18ns

N-CHANNEL

220 ns

3.1V

41A

TO-247AC

1.2kV

1200V

2.43V

49 ns

960V, 21A, 10 Ω, 15V

3.1V @ 15V, 21A

690 ns

86nC

82A

24ns/220ns

1.04mJ (on), 3.4mJ (off)

20V

3V

190ns

20.3mm

15.875mm

5.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
IRG4BC30F-STRRP

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2000

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

Standard

-

-

-

-

-

-

-

-

-

600V

-

-

480V, 17A, 23 Ω, 15V

1.8V @ 15V, 17A

-

51nC

120A

21ns/200ns

230μJ (on), 1.18mJ (off)

-

-

-

-

-

-

-

-

-

-

IRG4BC30F-SPBF

100W

31A

-

-

-

-

-

-

-

-

-

IRG4PH40UPBF vs IRG4BC30F-STRRP
IRG4BC40W-LPBF

Infineon Technologies

9 Weeks

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

SILICON

-55°C~150°C TJ

Tube

2010

Last Time Buy

1 (Unlimited)

3

-

EAR99

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

600V

160W

40A

1

Dual

160W

COLLECTOR

Standard

-

POWER CONTROL

22ns

N-CHANNEL

-

2.5V

40A

-

600V

-

2.36V

48 ns

480V, 20A, 10 Ω, 15V

2.5V @ 15V, 20A

294 ns

98nC

160A

27ns/100ns

110μJ (on), 230μJ (off)

20V

6V

110ns

9.652mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

2.084002g

e3

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

260

30

-

-

-

IRG4PH40UPBF vs IRG4BC40W-LPBF
IRG4BC30F-SPBF

Infineon Technologies

11 Weeks

Surface Mount, Through Hole

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~150°C TJ

Tube

2000

Obsolete

1 (Unlimited)

-

-

-

-

-

600V

100W

31A

-

Single

100W

-

Standard

-

-

15ns

-

-

1.8V

31A

-

600V

600V

-

-

480V, 17A, 23Ohm, 15V

1.8V @ 15V, 17A

-

51nC

120A

21ns/200ns

230μJ (on), 1.18mJ (off)

-

-

-

4.83mm

10.5156mm

4.699mm

No SVHC

No

RoHS Compliant

Lead Free

IRG4BC30F-SPBF

100W

31A

260.39037mg

-

-

-

-

-

D2PAK

150°C

-55°C

IRG4PH40UPBF vs IRG4BC30F-SPBF