Infineon Technologies IRFZ46NS
- Part Number:
- IRFZ46NS
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853687-IRFZ46NS
- Description:
- MOSFET N-CH 55V 53A D2PAK
- ECAD Model:
-
- Datasheet:
- IRFZ46NS
Infineon Technologies IRFZ46NS technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFZ46NS.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.8W Ta 107W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs16.5m Ω @ 28A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1696pF @ 25V
- Current - Continuous Drain (Id) @ 25°C53A Tc
- Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)39A
- Drain-source On Resistance-Max0.0165Ohm
- Pulsed Drain Current-Max (IDM)180A
- DS Breakdown Voltage-Min55V
- Avalanche Energy Rating (Eas)152 mJ
- RoHS StatusNon-RoHS Compliant
IRFZ46NS Description
International Rectifier's Advanced HEXFET? Power MOSFETs use advanced processing techniques to achieve extraordinarily low on-resistance per silicon area. This benefit, when paired with the high switching speed and ruggedized device architecture that HEXFET power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. At power dissipation values of around 50 watts, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220's low heat resistance and low packaging cost contribute to its widespread use in the industry.
IRFZ46NS Features
Advanced Process Technology
Ultra-Low On-Resistance
Dynamic DV/DT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
IRFZ46NS Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
International Rectifier's Advanced HEXFET? Power MOSFETs use advanced processing techniques to achieve extraordinarily low on-resistance per silicon area. This benefit, when paired with the high switching speed and ruggedized device architecture that HEXFET power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. At power dissipation values of around 50 watts, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220's low heat resistance and low packaging cost contribute to its widespread use in the industry.
IRFZ46NS Features
Advanced Process Technology
Ultra-Low On-Resistance
Dynamic DV/DT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
IRFZ46NS Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRFZ46NS More Descriptions
TO-263 MOSFETs ROHS
TO263 MOSFET RoHS
TO263 MOSFET RoHS
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