IRFS52N15DPBF

IR IRFS52N15DPBF

Part Number:
IRFS52N15DPBF
Manufacturer:
IR
Ventron No:
5546043-IRFS52N15DPBF
Description:
passive components in stock
ECAD Model:
Datasheet:
IRFS52N15DPBF

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Specifications
IR IRFS52N15DPBF technical specifications, attributes, parameters and parts with similar specifications to IR IRFS52N15DPBF.
  • Factory Lead Time
    52 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2002
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    32MOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    150V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    60A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    3.8W Ta 230W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    320W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    16 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    32m Ω @ 36A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2770pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    51A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    89nC @ 10V
  • Rise Time
    47ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    28 ns
  • Continuous Drain Current (ID)
    60A
  • Threshold Voltage
    5V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    150V
  • Pulsed Drain Current-Max (IDM)
    240A
  • Dual Supply Voltage
    150V
  • Avalanche Energy Rating (Eas)
    470 mJ
  • Nominal Vgs
    5 V
  • Height
    4.826mm
  • Length
    10.668mm
  • Width
    9.65mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFS52N15DPBF Description
IRFS52N15DPBF is an N-channel Power MOSFET from the manufacturer Infineon Technologies with a voltage of 150V. The operating temperature of IRFS52N15DPBF is -55°C~175°C TJ and its maximum power dissipation is 230W Tc. IRFS52N15DPBF has 3 pins and it is available in TO-263-3, D2Pak (2 Leads Tab), and TO-263AB packaging way. Turn On Delay Time of IRFS52N15DPBF is 16 ns and its Turn-Off Delay Time is 28 ns.

IRFS52N15DPBF Features
Low Gate-to-Drain Charge to Reduce\ Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify
Fully Characterized Avalanche Voltage and Current
Lead-Free

IRFS52N15DPBF Applications High-frequency DC-DC converters
Plasma Display Panel
IRFS52N15DPBF More Descriptions
Transistor MOSFET Negative Channel 150 Volt 51A 3-Pin(2 Tab) D2PAK
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;D2Pak;PD 230W;VGS /-30
Single N-Channel 150 V 32 mOhm 89 nC HEXFET® Power Mosfet - D2PAK
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH 150V 51A 3-Pin (2 Tab) D2PAK
MOSFET, N, 150V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:150V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:320W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:43A; Cont Current Id @ 25°C:60A; Current Id Max:60A; Package / Case:D2-PAK; Power Dissipation Pd:320W; Power Dissipation Pd:320W; Pulse Current Idm:240A; Rth:0.47; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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