IR IRFS52N15DPBF
- Part Number:
- IRFS52N15DPBF
- Manufacturer:
- IR
- Ventron No:
- 5546043-IRFS52N15DPBF
- Description:
- passive components in stock
- Datasheet:
- IRFS52N15DPBF
IR IRFS52N15DPBF technical specifications, attributes, parameters and parts with similar specifications to IR IRFS52N15DPBF.
- Factory Lead Time52 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2002
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance32MOhm
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryFET General Purpose Power
- Voltage - Rated DC150V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating60A
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max3.8W Ta 230W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation320W
- Case ConnectionDRAIN
- Turn On Delay Time16 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs32m Ω @ 36A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2770pF @ 25V
- Current - Continuous Drain (Id) @ 25°C51A Tc
- Gate Charge (Qg) (Max) @ Vgs89nC @ 10V
- Rise Time47ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time28 ns
- Continuous Drain Current (ID)60A
- Threshold Voltage5V
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage150V
- Pulsed Drain Current-Max (IDM)240A
- Dual Supply Voltage150V
- Avalanche Energy Rating (Eas)470 mJ
- Nominal Vgs5 V
- Height4.826mm
- Length10.668mm
- Width9.65mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFS52N15DPBF Description
IRFS52N15DPBF is an N-channel Power MOSFET from the manufacturer Infineon Technologies with a voltage of 150V. The operating temperature of IRFS52N15DPBF is -55°C~175°C TJ and its maximum power dissipation is 230W Tc. IRFS52N15DPBF has 3 pins and it is available in TO-263-3, D2Pak (2 Leads Tab), and TO-263AB packaging way. Turn On Delay Time of IRFS52N15DPBF is 16 ns and its Turn-Off Delay Time is 28 ns.
IRFS52N15DPBF Features
Low Gate-to-Drain Charge to Reduce\ Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify
Fully Characterized Avalanche Voltage and Current
Lead-Free
IRFS52N15DPBF Applications High-frequency DC-DC converters
Plasma Display Panel
IRFS52N15DPBF is an N-channel Power MOSFET from the manufacturer Infineon Technologies with a voltage of 150V. The operating temperature of IRFS52N15DPBF is -55°C~175°C TJ and its maximum power dissipation is 230W Tc. IRFS52N15DPBF has 3 pins and it is available in TO-263-3, D2Pak (2 Leads Tab), and TO-263AB packaging way. Turn On Delay Time of IRFS52N15DPBF is 16 ns and its Turn-Off Delay Time is 28 ns.
IRFS52N15DPBF Features
Low Gate-to-Drain Charge to Reduce\ Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify
Fully Characterized Avalanche Voltage and Current
Lead-Free
IRFS52N15DPBF Applications High-frequency DC-DC converters
Plasma Display Panel
IRFS52N15DPBF More Descriptions
Transistor MOSFET Negative Channel 150 Volt 51A 3-Pin(2 Tab) D2PAK
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;D2Pak;PD 230W;VGS /-30
Single N-Channel 150 V 32 mOhm 89 nC HEXFET® Power Mosfet - D2PAK
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH 150V 51A 3-Pin (2 Tab) D2PAK
MOSFET, N, 150V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:150V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:320W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:43A; Cont Current Id @ 25°C:60A; Current Id Max:60A; Package / Case:D2-PAK; Power Dissipation Pd:320W; Power Dissipation Pd:320W; Pulse Current Idm:240A; Rth:0.47; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;D2Pak;PD 230W;VGS /-30
Single N-Channel 150 V 32 mOhm 89 nC HEXFET® Power Mosfet - D2PAK
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH 150V 51A 3-Pin (2 Tab) D2PAK
MOSFET, N, 150V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:150V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:320W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:43A; Cont Current Id @ 25°C:60A; Current Id Max:60A; Package / Case:D2-PAK; Power Dissipation Pd:320W; Power Dissipation Pd:320W; Pulse Current Idm:240A; Rth:0.47; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
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