.jpg)
Infineon Technologies IRFR5505PBF
- Part Number:
- IRFR5505PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3070253-IRFR5505PBF
- Description:
- MOSFET P-CH 55V 18A DPAK
- ECAD Model:
-
- Datasheet:
- IRFR5505PBF
Infineon Technologies IRFR5505PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR5505PBF.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1997
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max57W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs110m Ω @ 9.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds650pF @ 25V
- Current - Continuous Drain (Id) @ 25°C18A Tc
- Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-252AA
- Drain Current-Max (Abs) (ID)18A
- Drain-source On Resistance-Max0.11Ohm
- Pulsed Drain Current-Max (IDM)64A
- DS Breakdown Voltage-Min55V
- Avalanche Energy Rating (Eas)150 mJ
- RoHS StatusROHS3 Compliant
IRFR5505PBF Description
IRFR5505PBF is a P-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 55V. The operating temperature of the IRFR5505PBF is -55??C~150??C TJ and its maximum power dissipation is 57W Tc. IRFR5505PBF has 2 pins and it is available in Tube packaging way.
IRFR5505PBF Features
Drain-source On Resistance-Max: 0.11Ohm
DS Breakdown Voltage-Min: 55V
Drain Current-Max (Abs) (ID): 18A
Pulsed Drain Current-Max (IDM): 64A
IRFR5505PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRFR5505PBF is a P-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 55V. The operating temperature of the IRFR5505PBF is -55??C~150??C TJ and its maximum power dissipation is 57W Tc. IRFR5505PBF has 2 pins and it is available in Tube packaging way.
IRFR5505PBF Features
Drain-source On Resistance-Max: 0.11Ohm
DS Breakdown Voltage-Min: 55V
Drain Current-Max (Abs) (ID): 18A
Pulsed Drain Current-Max (IDM): 64A
IRFR5505PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRFR5505PBF More Descriptions
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;D-Pak (TO-252AA);PD 57W
Transistor MOSFET P Channel 55 Volt 18 Amp 3 Pin 2 Tab Dpak
Single P-Channel 55 V 0.11 Ohm 32 nC HEXFET® Power Mosfet - TO-252AA
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, -55V, -18A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:55V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:57W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-18A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.2°C/W; Package / Case:DPAK; Power Dissipation Pd:57W; Power Dissipation Pd:57W; Pulse Current Idm:64A; SMD Marking:IRFR5505; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:-55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
Transistor MOSFET P Channel 55 Volt 18 Amp 3 Pin 2 Tab Dpak
Single P-Channel 55 V 0.11 Ohm 32 nC HEXFET® Power Mosfet - TO-252AA
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, -55V, -18A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:55V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:57W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-18A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.2°C/W; Package / Case:DPAK; Power Dissipation Pd:57W; Power Dissipation Pd:57W; Pulse Current Idm:64A; SMD Marking:IRFR5505; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:-55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
The three parts on the right have similar specifications to IRFR5505PBF.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusView Compare
-
IRFR5505PBFSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~150°C TJTubeHEXFET®1997e3Discontinued1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCEOther TransistorsMOSFET (Metal Oxide)SINGLEGULL WING260not_compliant30R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE57W TcENHANCEMENT MODEDRAINP-ChannelSWITCHING110m Ω @ 9.6A, 10V4V @ 250μA650pF @ 25V18A Tc32nC @ 10V55V10V±20VTO-252AA18A0.11Ohm64A55V150 mJROHS3 Compliant- -
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®2004-Obsolete1 (Unlimited)-EAR99---MOSFET (Metal Oxide)---compliant-----144W Tc--N-Channel-260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V-------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTubeHEXFET®2004e0Obsolete1 (Unlimited)2EAR99TIN LEADAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE-MOSFET (Metal Oxide)SINGLEGULL WING245-30R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE140W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING7.5m Ω @ 42A, 10V4V @ 100μA2840pF @ 25V42A Tc95nC @ 10V55V10V±20VTO-252AA42A0.0075Ohm360A55V110 mJNon-RoHS Compliant
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®1998-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)---------107W Tc--N-Channel-27m Ω @ 26A, 10V4V @ 250μA1300pF @ 25V44A Tc65nC @ 10V55V10V±20V------Non-RoHS Compliant
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
19 September 2023
STM32F303CCT6 Microcontroller: Footprint, Equivalent and Advantages
Ⅰ. What is STM32F303CCT6?Ⅱ. 3D Model and footprint of STM32F303CCT6Ⅲ. Technical parametersⅣ. Features of STM32F303CCT6Ⅴ. Package and packaging of STM32F303CCT6Ⅵ. Typical and maximum current consumptionⅦ. Advantages of STM32F303CCT6... -
20 September 2023
ATMEGA8-16PU Microcontroller: Symbol, Equivalent and Electrical Characteristics
Ⅰ. Overview of ATMEGA8-16PUⅡ. Symbol, Footprint and Pin Configuration of ATMEGA8-16PUⅢ. Technical parametersⅣ. Electrical characteristics of ATMEGA8-16PUⅤ. What is the difference between ATMEGA8-16PU and ATMEGA8-16PI?Ⅵ. I/O Memory of... -
20 September 2023
The Pinout, Advantages, and Electrical Characteristics of AO4466
Ⅰ. What is AO4466?Ⅱ. Symbol, Pinout and Footprint of AO4466Ⅲ. Technical parametersⅣ. What are the advantages of AO4466?Ⅴ. Application fields of AO4466Ⅵ. Typical electrical characteristicsⅦ. How to detect... -
21 September 2023
8 bit AVR Microcontroller ATMEGA32U4-AU
Ⅰ. Overview of ATMEGA32U4-AUⅡ. Symbol and Footprint of ATMEGA32U4-AUⅢ. Technical parametersⅣ. Features of ATMEGA32U4-AUⅤ. Pin descriptionⅥ. What types of products is ATMEGA32U4-AU suitable for?Ⅰ. Overview of ATMEGA32U4-AUATMEGA32U4-AU is...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.