Vishay Siliconix IRFR024TRPBF
- Part Number:
- IRFR024TRPBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2479294-IRFR024TRPBF
- Description:
- MOSFET N-CH 60V 14A DPAK
- Datasheet:
- IRFR024TRPBF
Vishay Siliconix IRFR024TRPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR024TRPBF.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageD-Pak
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1998
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance100mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.5W Ta 42W Tc
- Element ConfigurationSingle
- Power Dissipation2.5W
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs100mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds640pF @ 25V
- Current - Continuous Drain (Id) @ 25°C14A Tc
- Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
- Rise Time58ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)42 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)14A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Input Capacitance640pF
- Drain to Source Resistance100mOhm
- Rds On Max100 mΩ
- Nominal Vgs2 V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFR024TRPBF Overview
A device's maximal input capacitance is 640pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 14A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 25 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 100mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFR024TRPBF Features
a continuous drain current (ID) of 14A
the turn-off delay time is 25 ns
single MOSFETs transistor is 100mOhm
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)
IRFR024TRPBF Applications
There are a lot of Vishay Siliconix
IRFR024TRPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 640pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 14A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 25 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 100mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFR024TRPBF Features
a continuous drain current (ID) of 14A
the turn-off delay time is 25 ns
single MOSFETs transistor is 100mOhm
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)
IRFR024TRPBF Applications
There are a lot of Vishay Siliconix
IRFR024TRPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFR024TRPBF More Descriptions
Single N-Channel 60 V 0.1 Ohms Surface Mount Power Mosfet - TO-252
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N Channel Mosfet, 60V, 14A, D-Pak, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10Vrohs Compliant: No
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N Channel Mosfet, 60V, 14A, D-Pak, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10Vrohs Compliant: No
The three parts on the right have similar specifications to IRFR024TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesECCN CodeReach Compliance CodeSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRFR024TRPBF8 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633D-Pak1.437803g-55°C~150°C TJTape & Reel (TR)1998Active1 (Unlimited)100mOhm150°C-55°CMOSFET (Metal Oxide)112.5W Ta 42W TcSingle2.5W13 nsN-Channel100mOhm @ 8.4A, 10V4V @ 250μA640pF @ 25V14A Tc25nC @ 10V58ns60V10V±20V42 ns25 ns14A4V20V640pF100mOhm100 mΩ2 V2.39mm6.73mm6.22mmUnknownNoROHS3 CompliantLead Free--------------------------
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--144W Tc---N-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V----------------HEXFET®EAR99compliant----------------------
-
---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTube2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)1-140W Tc---N-Channel7.5m Ω @ 42A, 10V4V @ 100μA2840pF @ 25V42A Tc95nC @ 10V-55V10V±20V--------------Non-RoHS Compliant-HEXFET®EAR99-YESSILICONe02TIN LEADAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCESINGLEGULL WING24530R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA42A0.0075Ohm360A55V110 mJ
-
---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)1998Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--107W Tc---N-Channel27m Ω @ 26A, 10V4V @ 250μA1300pF @ 25V44A Tc65nC @ 10V-55V10V±20V--------------Non-RoHS Compliant-HEXFET®------------------------
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