Infineon Technologies IRFP3206PBF
- Part Number:
- IRFP3206PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479958-IRFP3206PBF
- Description:
- MOSFET N-CH 60V 120A TO-247AC
- ECAD Model:
-
- Datasheet:
- IRFP3206PBF
Infineon Technologies IRFP3206PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP3206PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance3MOhm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max280W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation280W
- Case ConnectionDRAIN
- Turn On Delay Time19 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id4V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds6540pF @ 50V
- Current - Continuous Drain (Id) @ 25°C120A Tc
- Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
- Rise Time82ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)83 ns
- Turn-Off Delay Time55 ns
- Continuous Drain Current (ID)200A
- Threshold Voltage4V
- JEDEC-95 CodeTO-247AC
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Pulsed Drain Current-Max (IDM)840A
- Recovery Time50 ns
- Max Junction Temperature (Tj)175°C
- Height24.99mm
- Length15.87mm
- Width5.3086mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFP3206PBF Description
IRFP3206PBF MOSFET is a type of Power MOSFET that is optimized for high current capability. MOSFET IRFP3206PBF is ideal for low frequency applications requiring performance and ruggedness. IRFP3206PBF Infineon Technologies is general use and is suitable for DC motors, battery management systems, inverters, and DC-DC converters.
IRFP3206PBF Features
High current carrying capability
Product qualification
Wide availability
High-current rating
Broadest availability
IRFP3206PBF Applications
Battery powered applications
Power tools
DC motor drives
Light Electric Vehicles (LEV)
SMPS
IRFP3206PBF More Descriptions
IRFP3206PBF N-channel MOSFET Transistor, 200 A, 60 V, 3-Pin TO-247AC
Trans MOSFET N-CH Si 60V 200A 3-Pin(3 Tab) TO-247AC Tube / MOSFET N-CH 60V 120A TO-247AC
Single N-Channel 60 V 3 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:200A; Package / Case:TO-247AC; Power Dissipation Pd:280W; Pulse Current Idm:840A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Trans MOSFET N-CH Si 60V 200A 3-Pin(3 Tab) TO-247AC Tube / MOSFET N-CH 60V 120A TO-247AC
Single N-Channel 60 V 3 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:200A; Package / Case:TO-247AC; Power Dissipation Pd:280W; Pulse Current Idm:840A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
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