Vishay Siliconix IRFIZ34GPBF
- Part Number:
- IRFIZ34GPBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2482986-IRFIZ34GPBF
- Description:
- MOSFET N-CH 60V 20A TO220FP
- Datasheet:
- IRFIZ34GPBF
Vishay Siliconix IRFIZ34GPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFIZ34GPBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack, Isolated Tab
- Number of Pins3
- Weight6.000006g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance50mOhm
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max42W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation42W
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs50m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C20A Tc
- Gate Charge (Qg) (Max) @ Vgs46nC @ 10V
- Rise Time100ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)52 ns
- Turn-Off Delay Time29 ns
- Continuous Drain Current (ID)20A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Pulsed Drain Current-Max (IDM)80A
- DS Breakdown Voltage-Min60V
- Nominal Vgs4 V
- Height9.8mm
- Length10.63mm
- Width4.83mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFIZ34GPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1200pF @ 25V.This device has a continuous drain current (ID) of [20A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 29 ns.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFIZ34GPBF Features
a continuous drain current (ID) of 20A
the turn-off delay time is 29 ns
based on its rated peak drain current 80A.
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)
IRFIZ34GPBF Applications
There are a lot of Vishay Siliconix
IRFIZ34GPBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1200pF @ 25V.This device has a continuous drain current (ID) of [20A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 29 ns.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFIZ34GPBF Features
a continuous drain current (ID) of 20A
the turn-off delay time is 29 ns
based on its rated peak drain current 80A.
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)
IRFIZ34GPBF Applications
There are a lot of Vishay Siliconix
IRFIZ34GPBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFIZ34GPBF More Descriptions
Single N-Channel 60 V 0.05 Ohms Flange Mount Power Mosfet - TO-220 FULLPAK
Trans MOSFET N-CH 60V 20A 3-Pin(3 Tab) TO-220FP / MOSFET N-CH 60V 20A TO220FP
60V 20A 50m´Î@10V12A 42W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
N CHANNEL MOSFET, 60V, 20A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold V
Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Trans MOSFET N-CH 60V 20A 3-Pin(3 Tab) TO-220FP / MOSFET N-CH 60V 20A TO220FP
60V 20A 50m´Î@10V12A 42W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
N CHANNEL MOSFET, 60V, 20A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold V
Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to IRFIZ34GPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxVoltage - Rated DCCurrent RatingDrain to Source Breakdown VoltageView Compare
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IRFIZ34GPBF8 WeeksThrough HoleThrough HoleTO-220-3 Full Pack, Isolated Tab36.000006gSILICON-55°C~175°C TJTube2011e3yesActive1 (Unlimited)3EAR9950mOhmMATTE TINMOSFET (Metal Oxide)2604031142W TcSingleENHANCEMENT MODE42W13 nsN-ChannelSWITCHING50m Ω @ 12A, 10V4V @ 250μA1200pF @ 25V20A Tc46nC @ 10V100ns60V10V±20V52 ns29 ns20A4VTO-220AB20V80A60V4 V9.8mm10.63mm4.83mmUnknownNoROHS3 CompliantLead Free----------
-
-Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab36.000006g--55°C~150°C TJTube2016--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---1135W TcSingle-35W12 nsP-Channel-1Ohm @ 2.5A, 10V4V @ 250μA680pF @ 25V4.1A Tc38nC @ 10V23ns250V10V±20V21 ns34 ns4.1A--20V---4 V9.8mm10.63mm4.83mmUnknownNoNon-RoHS Compliant-TO-220-3150°C-55°C680pF1Ohm1 Ω---
-
-Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab36.000006g--55°C~150°C TJTube2016--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----140W TcSingle-40W11 nsN-Channel-280mOhm @ 4.7A, 10V4V @ 250μA1300pF @ 25V7.9A Tc68nC @ 10V24ns250V10V±20V24 ns53 ns7.9A--20V---9.8mm10.63mm4.83mm-NoNon-RoHS CompliantContains LeadTO-220-3150°C-55°C1.3nF280mOhm280 mΩ250V7.9A250V
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-Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab----Tube---Active1 (Unlimited)----MOSFET (Metal Oxide)----------N-Channel--4V @ 250μA-1.6A Ta--400V----1.6A-----------Non-RoHS Compliant----------
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