IRFIZ34GPBF

Vishay Siliconix IRFIZ34GPBF

Part Number:
IRFIZ34GPBF
Manufacturer:
Vishay Siliconix
Ventron No:
2482986-IRFIZ34GPBF
Description:
MOSFET N-CH 60V 20A TO220FP
ECAD Model:
Datasheet:
IRFIZ34GPBF

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Specifications
Vishay Siliconix IRFIZ34GPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFIZ34GPBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack, Isolated Tab
  • Number of Pins
    3
  • Weight
    6.000006g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    50mOhm
  • Terminal Finish
    MATTE TIN
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    42W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    42W
  • Turn On Delay Time
    13 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    50m Ω @ 12A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1200pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    20A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    46nC @ 10V
  • Rise Time
    100ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    52 ns
  • Turn-Off Delay Time
    29 ns
  • Continuous Drain Current (ID)
    20A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Pulsed Drain Current-Max (IDM)
    80A
  • DS Breakdown Voltage-Min
    60V
  • Nominal Vgs
    4 V
  • Height
    9.8mm
  • Length
    10.63mm
  • Width
    4.83mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFIZ34GPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1200pF @ 25V.This device has a continuous drain current (ID) of [20A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 29 ns.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFIZ34GPBF Features
a continuous drain current (ID) of 20A
the turn-off delay time is 29 ns
based on its rated peak drain current 80A.
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)


IRFIZ34GPBF Applications
There are a lot of Vishay Siliconix
IRFIZ34GPBF applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFIZ34GPBF More Descriptions
Single N-Channel 60 V 0.05 Ohms Flange Mount Power Mosfet - TO-220 FULLPAK
Trans MOSFET N-CH 60V 20A 3-Pin(3 Tab) TO-220FP / MOSFET N-CH 60V 20A TO220FP
60V 20A 50m´Î@10V12A 42W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
N CHANNEL MOSFET, 60V, 20A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold V
Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Product Comparison
The three parts on the right have similar specifications to IRFIZ34GPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Voltage - Rated DC
    Current Rating
    Drain to Source Breakdown Voltage
    View Compare
  • IRFIZ34GPBF
    IRFIZ34GPBF
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    6.000006g
    SILICON
    -55°C~175°C TJ
    Tube
    2011
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    50mOhm
    MATTE TIN
    MOSFET (Metal Oxide)
    260
    40
    3
    1
    1
    42W Tc
    Single
    ENHANCEMENT MODE
    42W
    13 ns
    N-Channel
    SWITCHING
    50m Ω @ 12A, 10V
    4V @ 250μA
    1200pF @ 25V
    20A Tc
    46nC @ 10V
    100ns
    60V
    10V
    ±20V
    52 ns
    29 ns
    20A
    4V
    TO-220AB
    20V
    80A
    60V
    4 V
    9.8mm
    10.63mm
    4.83mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFI9634G
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    6.000006g
    -
    -55°C~150°C TJ
    Tube
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    1
    35W Tc
    Single
    -
    35W
    12 ns
    P-Channel
    -
    1Ohm @ 2.5A, 10V
    4V @ 250μA
    680pF @ 25V
    4.1A Tc
    38nC @ 10V
    23ns
    250V
    10V
    ±20V
    21 ns
    34 ns
    4.1A
    -
    -
    20V
    -
    -
    -4 V
    9.8mm
    10.63mm
    4.83mm
    Unknown
    No
    Non-RoHS Compliant
    -
    TO-220-3
    150°C
    -55°C
    680pF
    1Ohm
    1 Ω
    -
    -
    -
  • IRFI644G
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    6.000006g
    -
    -55°C~150°C TJ
    Tube
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    1
    40W Tc
    Single
    -
    40W
    11 ns
    N-Channel
    -
    280mOhm @ 4.7A, 10V
    4V @ 250μA
    1300pF @ 25V
    7.9A Tc
    68nC @ 10V
    24ns
    250V
    10V
    ±20V
    24 ns
    53 ns
    7.9A
    -
    -
    20V
    -
    -
    -
    9.8mm
    10.63mm
    4.83mm
    -
    No
    Non-RoHS Compliant
    Contains Lead
    TO-220-3
    150°C
    -55°C
    1.3nF
    280mOhm
    280 mΩ
    250V
    7.9A
    250V
  • IRFI710G
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    -
    -
    -
    -
    Tube
    -
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    -
    4V @ 250μA
    -
    1.6A Ta
    -
    -
    400V
    -
    -
    -
    -
    1.6A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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