Infineon Technologies IRF9Z34NSTRRPBF
- Part Number:
- IRF9Z34NSTRRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2487582-IRF9Z34NSTRRPBF
- Description:
- MOSFET P-CH 55V 19A D2PAK
- Datasheet:
- IRF9Z34NSTRRPBF
Infineon Technologies IRF9Z34NSTRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9Z34NSTRRPBF.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published1997
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.8W Ta 68W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs100m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds620pF @ 25V
- Current - Continuous Drain (Id) @ 25°C19A Tc
- Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)19A
- Drain-source On Resistance-Max0.1Ohm
- Pulsed Drain Current-Max (IDM)68A
- DS Breakdown Voltage-Min55V
- Avalanche Energy Rating (Eas)180 mJ
- RoHS StatusROHS3 Compliant
IRF9Z34NSTRRPBF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 180 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 620pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 19A.Pulsed drain current is maximum rated peak drain current 68A.A normal operation of the DS requires keeping the breakdown voltage above 55V.This transistor requires a drain-source voltage (Vdss) of 55V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF9Z34NSTRRPBF Features
the avalanche energy rating (Eas) is 180 mJ
based on its rated peak drain current 68A.
a 55V drain to source voltage (Vdss)
IRF9Z34NSTRRPBF Applications
There are a lot of Infineon Technologies
IRF9Z34NSTRRPBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 180 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 620pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 19A.Pulsed drain current is maximum rated peak drain current 68A.A normal operation of the DS requires keeping the breakdown voltage above 55V.This transistor requires a drain-source voltage (Vdss) of 55V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF9Z34NSTRRPBF Features
the avalanche energy rating (Eas) is 180 mJ
based on its rated peak drain current 68A.
a 55V drain to source voltage (Vdss)
IRF9Z34NSTRRPBF Applications
There are a lot of Infineon Technologies
IRF9Z34NSTRRPBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRF9Z34NSTRRPBF More Descriptions
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.1Ohm;ID -19A;D2Pak;PD 68W;VGS /-20V;-55d
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Single P-Channel 55 V 0.1 Ohm 35nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET P-CH Si 55V 19A 3-Pin(2 Tab) D2PAK T/R
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-19A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2PAK ;RoHS Compliant: Yes
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Single P-Channel 55 V 0.1 Ohm 35nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET P-CH Si 55V 19A 3-Pin(2 Tab) D2PAK T/R
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-19A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2PAK ;RoHS Compliant: Yes
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