Infineon Technologies IRF9530NS

Name: IRF9530NS
Brand: Infineon Technologies
SKU: 3554661-IRF9530NS
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF9530NS

Manufacturer:: Infineon Technologies

Ventron No:: 3554661-IRF9530NS

Description:: MOSFET P-CH 100V 14A D2PAK

ECAD Model:

Datasheet:: IRF9530NS

Part Pictures

Specifications

Infineon Technologies IRF9530NS technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9530NS.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
1998
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
HTS Code
8541.29.00.95
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
225
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.8W Ta 79W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
200m Ω @ 8.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
760pF @ 25V
Current - Continuous Drain (Id) @ 25°C
14A Tc
Gate Charge (Qg) (Max) @ Vgs
58nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
14A
Drain-source On Resistance-Max
0.2Ohm
Pulsed Drain Current-Max (IDM)
56A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
250 mJ
RoHS Status
Non-RoHS Compliant

Description

IRF9530NS Description
The IRF9530NS is a -100V single P-channel HEXFET? Power MOSFET, fifth-generation HEXFET utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRF9530NS Features
Advanced Process Technology
Surface Mount (IRF9530NS)
Low-profile through-hole (IRF9530NL)
175??C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated

IRF9530NS Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
Railway traction which is mostly through d.c. drives
And many loads which may have to be frequently switched

IRF9530NS More Descriptions

MOSFET, Power; P-Channel; 20 Volts (Max.); -14 Amp (Max.) @ 25 degC; 79 W
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-14A; On-Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2-PAK; Drain Source On Resistance @ 10V:200mohm RoHS Compliant: No