Infineon Technologies IRF7425PBF
- Part Number:
- IRF7425PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3070517-IRF7425PBF
- Description:
- MOSFET P-CH 20V 15A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7425PBF
Infineon Technologies IRF7425PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7425PBF.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2005
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureULTRA LOW RESISTANCE
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PDSO-G8
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8.2m Ω @ 15A, 4.5V
- Vgs(th) (Max) @ Id1.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7980pF @ 15V
- Current - Continuous Drain (Id) @ 25°C15A Ta
- Gate Charge (Qg) (Max) @ Vgs130nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- JEDEC-95 CodeMS-012AA
- Drain Current-Max (Abs) (ID)15A
- Drain-source On Resistance-Max0.0082Ohm
- Pulsed Drain Current-Max (IDM)60A
- DS Breakdown Voltage-Min20V
- RoHS StatusROHS3 Compliant
IRF7425PBF Description
The IRF7425PBF is a -20V single P-channel HEXFET? Power MOSFET utilizing advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The package has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal for a variety of power applications.
IRF7425PBF Features
RoHS Compliant
Industry-leading quality
Industry-Standard Pinout
P-Channel MOSFET
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
IRF7425PBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
The IRF7425PBF is a -20V single P-channel HEXFET? Power MOSFET utilizing advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The package has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal for a variety of power applications.
IRF7425PBF Features
RoHS Compliant
Industry-leading quality
Industry-Standard Pinout
P-Channel MOSFET
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
IRF7425PBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
IRF7425PBF More Descriptions
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 8.2 Milliohms;ID -15A;SO-8;PD 2.5W;VGS /-1
Single P-Channel 20 V 8.2 mOhm 87 nC HEXFET® Power Mosfet - SOIC-8
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Power Field-Effect Transistor, 15A I(D), 20V, 0.0082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, P, 20V, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:20V; On Resistance Rds(on):8.2mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-15A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:60A; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:-1.2V; Voltage Vgs Rds on Measurement:4.5V
Single P-Channel 20 V 8.2 mOhm 87 nC HEXFET® Power Mosfet - SOIC-8
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Power Field-Effect Transistor, 15A I(D), 20V, 0.0082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, P, 20V, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:20V; On Resistance Rds(on):8.2mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-15A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:60A; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:-1.2V; Voltage Vgs Rds on Measurement:4.5V
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