Infineon Technologies IRF7401TRPBF
- Part Number:
- IRF7401TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479275-IRF7401TRPBF
- Description:
- MOSFET N-CH 20V 8.7A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7401TRPBF
Infineon Technologies IRF7401TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7401TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance22mOhm
- Additional FeatureULTRA LOW RESISTANCE
- Voltage - Rated DC20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating8.7A
- Number of Elements1
- Row Spacing6.3 mm
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs22m Ω @ 4.1A, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1600pF @ 15V
- Current - Continuous Drain (Id) @ 25°C8.7A Ta
- Gate Charge (Qg) (Max) @ Vgs48nC @ 4.5V
- Rise Time72ns
- Drive Voltage (Max Rds On,Min Rds On)2.7V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)92 ns
- Turn-Off Delay Time65 ns
- Continuous Drain Current (ID)8.7A
- Threshold Voltage700mV
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage20V
- Pulsed Drain Current-Max (IDM)35A
- Dual Supply Voltage20V
- Nominal Vgs700 mV
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
IRF7401TRPBF Description
Fifth Generation HE FETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HE FET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
IRF7401TRPBF Features Generation V Technology Ultra-Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free
IRF7401TRPBF Features Generation V Technology Ultra-Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free
IRF7401TRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.022Ohm;ID 8.7A;SO-8;PD 2.5W;VGS /-12V;VF
Single N-Channel 20V 0.022 Ohm 48 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R / MOSFET N-CH 20V 8.7A 8-SOIC
Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:8.7A; On Resistance, Rds(on):22mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 22 / Gate-Source Voltage V = 12 / Fall Time ns = 92 / Rise Time ns = 72 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
Single N-Channel 20V 0.022 Ohm 48 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R / MOSFET N-CH 20V 8.7A 8-SOIC
Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:8.7A; On Resistance, Rds(on):22mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 22 / Gate-Source Voltage V = 12 / Fall Time ns = 92 / Rise Time ns = 72 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
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