SEME-LAB IRF240

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Single N-Channel 200 V 125 W 60 nC Hexfet Transistor Through Hole - TO-3
Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; On Resistance Rds(On):0.18Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:200V; Threshold Voltage Vgs:4V; Msl:- Rohs Compliant: No
MOSFET, N, TO-3; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:18A; Resistance, Rds On:0.18ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-3; Termination Type:Through Hole; Centres, Fixing:30mm; Current, Iar:18A; Current, Idm Pulse:72A; Energy, Avalanche Repetitive Ear:12.5mJ; Energy, Avalanche Single Pulse Eas:450mJ; Pins, No. of:2; Pitch, Lead:11mm; Power Dissipation:125W; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V; Weight:0.012kg