Infineon Technologies IR2010PBF
- Part Number:
- IR2010PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3253951-IR2010PBF
- Description:
- IC DRIVER HIGH/LOW SIDE 14DIP
- Datasheet:
- IR2010PBF
Infineon Technologies IR2010PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2010PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case14-DIP (0.300, 7.62mm)
- Number of Pins14
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published1996
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations14
- ECCN CodeEAR99
- SubcategoryMOSFET Drivers
- Max Power Dissipation1.6W
- TechnologyCMOS
- Voltage - Supply10V~20V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage15V
- Base Part NumberIR2010PBF
- Number of Outputs2
- Output Voltage20V
- Max Output Current3A
- Power Supplies15V
- Nominal Supply Current230μA
- Power Dissipation1.6W
- Output Current3A
- Max Supply Current230μA
- Propagation Delay135 ns
- Input TypeNon-Inverting
- Turn On Delay Time15 ns
- Reference Voltage200V
- Rise Time20ns
- Fall Time (Typ)25 ns
- Turn-Off Delay Time15 ns
- Rise / Fall Time (Typ)10ns 15ns
- Channel TypeIndependent
- Turn On Time0.135 μs
- Output Peak Current Limit-Nom3A
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)3A 3A
- High Side DriverYES
- Logic Voltage - VIL, VIH6V 9.5V
- Turn Off Time0.105 μs
- Height4.9276mm
- Length20.1676mm
- Width7.11mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IR2010PBF Overview
A higher degree of flexibility is achieved by adopting its 14-DIP (0.300, 7.62mm) package.Tube is the packaging method.Its recommended mounting way is Through Hole.When the supply voltage is set to 10V~20V, it can demonstrate its superiority.This device is designed with a IGBT, N-Channel MOSFET gate type.There is a temperature range for this device of -40°C~150°C TJ.Input type of Non-Inverting is used.Mosfet driver is based on 14 terminations.There are numerous related parts listed under its base part number IR2010PBF.In this case, Through Hole indicates how the device is to be mounted.Mosfet driver is configured wMosfet driverh 14 pins when designing.Specification is for 15V supply voltage operation.As a maximum, there is 3A limit to the output current.There are several useful electronic components found in its subcategory of MOSFET Drivers.Mosfet driver is based on a basis of 2 outputs that have been integrated.The device is capable of delivering a current of 3A.Its maximum power dissipation of 1.6W shows its power loss capacity without overheating.In order to ensure greater stability, it is recommended to keep the supply current at 230μA.Using its power supply of 15V, it provides solutions to diverse power supply problems.Mosfet gate drivers outputs 20V as voltage.
IR2010PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
14 pins
Maximum power dissipation of 1.6W
IR2010PBF Applications
There are a lot of Infineon Technologies IR2010PBF gate drivers applications.
High-speed communications
Telecom switch mode power supplies
Topologies
Uninterruptible Power Supplies (UPS)
Motor Drives
A/D drivers
DC/DC converters
Active Clamp Flyback or Forward and Synchronous Rectifier
Active filtering
Motor Control
A higher degree of flexibility is achieved by adopting its 14-DIP (0.300, 7.62mm) package.Tube is the packaging method.Its recommended mounting way is Through Hole.When the supply voltage is set to 10V~20V, it can demonstrate its superiority.This device is designed with a IGBT, N-Channel MOSFET gate type.There is a temperature range for this device of -40°C~150°C TJ.Input type of Non-Inverting is used.Mosfet driver is based on 14 terminations.There are numerous related parts listed under its base part number IR2010PBF.In this case, Through Hole indicates how the device is to be mounted.Mosfet driver is configured wMosfet driverh 14 pins when designing.Specification is for 15V supply voltage operation.As a maximum, there is 3A limit to the output current.There are several useful electronic components found in its subcategory of MOSFET Drivers.Mosfet driver is based on a basis of 2 outputs that have been integrated.The device is capable of delivering a current of 3A.Its maximum power dissipation of 1.6W shows its power loss capacity without overheating.In order to ensure greater stability, it is recommended to keep the supply current at 230μA.Using its power supply of 15V, it provides solutions to diverse power supply problems.Mosfet gate drivers outputs 20V as voltage.
IR2010PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
14 pins
Maximum power dissipation of 1.6W
IR2010PBF Applications
There are a lot of Infineon Technologies IR2010PBF gate drivers applications.
High-speed communications
Telecom switch mode power supplies
Topologies
Uninterruptible Power Supplies (UPS)
Motor Drives
A/D drivers
DC/DC converters
Active Clamp Flyback or Forward and Synchronous Rectifier
Active filtering
Motor Control
IR2010PBF More Descriptions
200 V high-side and low-side gate driver IC with shutdown, PDIP14, RoHSInfineon SCT
IGBT/MOSFET Driver, 2 Channels, High Side and Low Side, 3 A, 10 V to 20 V, 65 ns, 14 Pins, PDIP
MOSFET Driver 200 Volt 3A 2 Output Hi/Lo Side Non Input Volt 14-Pin Plastic Dip Tube
IR2010 Series 200 V 3 A 20 V Supply Dual High And Low Side Driver - PDIP-14
MOSFET Driver IC; Device Type:High and Low Side; No. of Outputs:2; Output Voltage:220V; Output Current:3A; Power Dissipation, Pd:1.6W; Supply Voltage Min:10V; Supply Voltage Max:25V; Termination Type:Through Hole ;RoHS Compliant: Yes
200 V High and Low Side Driver IC with typical 3 A source and 3 A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOICWB. | Summary of Features: Floating Channel designed for bootstrap operation; Fully operational to 200 V Tolerant to negative transient voltage; Tolerant to negative tansient voltage; dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V logic compatible Seperate logic supply range from 3.3 V to 20 V Logic and power ground /- 5 V offset; CMOS Schmitt-triggered inputs with pull-down; Shut down input turns off both channels; Matched propagation delay for both channels; Outputs in phase with inputs
DRIVER, HIGH/LOW SIDE, 2010, DIP14; Device Type:MOSFET; Module Configuration:High Side / Low Side; Peak Output Current:3A; Input Delay:95ns; Output Delay:65ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:14; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2010; IC Generic Number:2010; Logic Function Number:2010; Logic IC Function:Hi & Lo MOS Driver; No. of Outputs:2; Offset Voltage:200V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:3A; Output Sink Current:3A; Output Sink Current Min:3000mA; Output Source Current Max:3A; Output Source Current Min:3000mA; Output Voltage:220V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:DIP; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole; Turn Off Time:65ns; Turn On Time:95ns; Voltage Vcc Max:25V; Voltage Vcc Min:10V
IGBT/MOSFET Driver, 2 Channels, High Side and Low Side, 3 A, 10 V to 20 V, 65 ns, 14 Pins, PDIP
MOSFET Driver 200 Volt 3A 2 Output Hi/Lo Side Non Input Volt 14-Pin Plastic Dip Tube
IR2010 Series 200 V 3 A 20 V Supply Dual High And Low Side Driver - PDIP-14
MOSFET Driver IC; Device Type:High and Low Side; No. of Outputs:2; Output Voltage:220V; Output Current:3A; Power Dissipation, Pd:1.6W; Supply Voltage Min:10V; Supply Voltage Max:25V; Termination Type:Through Hole ;RoHS Compliant: Yes
200 V High and Low Side Driver IC with typical 3 A source and 3 A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOICWB. | Summary of Features: Floating Channel designed for bootstrap operation; Fully operational to 200 V Tolerant to negative transient voltage; Tolerant to negative tansient voltage; dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V logic compatible Seperate logic supply range from 3.3 V to 20 V Logic and power ground /- 5 V offset; CMOS Schmitt-triggered inputs with pull-down; Shut down input turns off both channels; Matched propagation delay for both channels; Outputs in phase with inputs
DRIVER, HIGH/LOW SIDE, 2010, DIP14; Device Type:MOSFET; Module Configuration:High Side / Low Side; Peak Output Current:3A; Input Delay:95ns; Output Delay:65ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:14; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2010; IC Generic Number:2010; Logic Function Number:2010; Logic IC Function:Hi & Lo MOS Driver; No. of Outputs:2; Offset Voltage:200V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:3A; Output Sink Current:3A; Output Sink Current Min:3000mA; Output Source Current Max:3A; Output Source Current Min:3000mA; Output Voltage:220V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:DIP; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole; Turn Off Time:65ns; Turn On Time:95ns; Voltage Vcc Max:25V; Voltage Vcc Min:10V
The three parts on the right have similar specifications to IR2010PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageBase Part NumberNumber of OutputsOutput VoltageMax Output CurrentPower SuppliesNominal Supply CurrentPower DissipationOutput CurrentMax Supply CurrentPropagation DelayInput TypeTurn On Delay TimeReference VoltageRise TimeFall Time (Typ)Turn-Off Delay TimeRise / Fall Time (Typ)Channel TypeTurn On TimeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHTurn Off TimeHeightLengthWidthRadiation HardeningREACH SVHCRoHS StatusLead FreeWeightJESD-609 CodeTerminal FinishTerminal FormTerminal PitchFrequencyOperating Supply CurrentInterface IC TypeNumber of DriversHigh Side Voltage - Max (Bootstrap)SeriesMax Junction Temperature (Tj)Built-in ProtectionsSurface MountPeak Reflow Temperature (Cel)Reflow Temperature-Max (s)JESD-30 CodeQualification StatusHeight Seated (Max)View Compare
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IR2010PBF12 WeeksThrough HoleThrough Hole14-DIP (0.300, 7.62mm)14-40°C~150°C TJTube1996Active1 (Unlimited)14EAR99MOSFET Drivers1.6WCMOS10V~20VDUAL115VIR2010PBF220V3A15V230μA1.6W3A230μA135 nsNon-Inverting15 ns200V20ns25 ns15 ns10ns 15nsIndependent0.135 μs3AHalf-BridgeIGBT, N-Channel MOSFET3A 3AYES6V 9.5V0.105 μs4.9276mm20.1676mm7.11mmNoNo SVHCROHS3 CompliantLead Free--------------------
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12 WeeksSurface MountSurface Mount16-SOIC (0.154, 3.90mm Width)16-40°C~125°C TJTape & Reel (TR)2006Active2 (1 Year)16EAR99-1W-9.5V~15VDUAL112VIR2086SPBF--1.2A--1W1.2A1mA-RC Input Circuit--60ns30 ns-40ns 20nsSynchronous0.06 μs1.2AHalf-BridgeN-Channel MOSFET1.2A 1.2AYES-0.03 μs1.4986mm9.9568mm3.9878mmNoNo SVHCROHS3 CompliantLead Free143.703733mge3Tin (Sn)GULL WING1.27mm500kHz1mAFULL BRIDGE BASED MOSFET DRIVER4100V---------
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12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-40°C~150°C TJTape & Reel (TR)2006Active2 (1 Year)8EAR99-1W-10V~15VDUAL112VIR2085SPBF--1mA-5mA1W1A5mA-RC Input Circuit--40ns20 ns-40ns 20nsIndependent-1AHalf-BridgeN-Channel MOSFET1A 1A---1.75mm4.9mm3.9mmNo-ROHS3 CompliantContains Lead, Lead Free-e3Matte Tin (Sn)GULL WING-500kHz--2100VAutomotive, AEC-Q100125°CTRANSIENT; OVER CURRENT; UNDER VOLTAGE------
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--Through Hole8-DIP (0.300, 7.62mm)--40°C~150°C TJTube1996Obsolete1 (Unlimited)8EAR99--CMOS10V~20VDUAL115VIR2011---------Inverting-----35ns 20nsIndependent-1AHigh-Side or Low-SideN-Channel MOSFET1A 1AYES0.7V 2.2V--9.88mm---Non-RoHS Compliant--------HALF BRIDGE BASED MOSFET DRIVER2200V---NONOT SPECIFIEDNOT SPECIFIEDR-PDIP-T8Not Qualified5.33mm
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