Infineon Technologies IDM02G120C5XTMA1

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1200V V(RRM), Silicon Carbide, TO-252
1200 V Silicion Carbide Schottky diode in a DPAK real2pin package, PG-TO252-2, RoHSInfineon SCT
Rectifier Diode Schottky SiC 1.2KV 14A 3-Pin(2 Tab) DPAK T/R
IDM02G120C5 Series 1200 V 2 A 5th Generation ThinQ!™SiC Schottky Diode-TO-252-3
SIC SCHOTTKY DIODE, 1.2KV, 14A, TO-252; Product Range: thinQ Series; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 1.2kV; Continuous Forward Current If: 14A; Total Capacitive Charge Qc: 14nC; Diode Case Style: TO-252; No. of Pins: 2 Pin; Junction Temperature Tj Max: 175°C; Automotive Qualification Standard: -; SVHC: No SVHC (27-Jun-2018); Forward Current If(AV): 14A; Forward Surge Current Ifsm Max: 37A; Forward Voltage VF Max: 1.4V; Operating Temperature Max: 175°C; Semiconductor Technology: SiC
With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives