GeneSiC Semiconductor GB02SHT03-46

Name: GB02SHT03-46
Brand: GeneSiC Semiconductor
SKU: 3582359-GB02SHT03-46
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: GB02SHT03-46

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 3582359-GB02SHT03-46

Description:: DIODE SCHOTTKY 300V 4A

ECAD Model:

Datasheet:: GB02SHT03-46

Specifications

GeneSiC Semiconductor GB02SHT03-46 technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor GB02SHT03-46.

Factory Lead Time
18 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AB, TO-46-3 Metal Can
Number of Pins
3
Packaging
Bulk
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Speed
No Recovery Time > 500mA (Io)
Diode Type
Silicon Carbide Schottky
Current - Reverse Leakage @ Vr
5μA @ 300V
Voltage - Forward (Vf) (Max) @ If
1.6V @ 1A
Operating Temperature - Junction
-55°C~225°C
Current - Average Rectified (Io)
4A DC
Max Reverse Voltage (DC)
300V
Average Rectified Current
4A
Reverse Recovery Time
0 s
Capacitance @ Vr, F
76pF @ 1V 1MHz
RoHS Status
RoHS Compliant

Description

GB02SHT03-46 Overview
For this device, the average rectified current is 4A volts.

GB02SHT03-46 Features
an average rectified current of 4A volts

GB02SHT03-46 Applications
There are a lot of GeneSiC Semiconductor
GB02SHT03-46 applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

GB02SHT03-46 More Descriptions

Sic Schottky Diode, 4A, 300V, To-206Ab
DIODE SCHOTTKY 300V 4A
DIODE SIL CARBIDE 300V 4A TO46

Product Comparison

The three parts on the right have similar specifications to GB02SHT03-46.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Operating Temperature - Junction

Current - Average Rectified (Io)

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Capacitance @ Vr, F

RoHS Status

Lifecycle Status

Pbfree Code

ECCN Code

Max Operating Temperature

Min Operating Temperature

HTS Code

Capacitance

Subcategory

Number of Elements

Element Configuration

Forward Current

Output Current-Max

Voltage - DC Reverse (Vr) (Max)

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Max Forward Surge Current (Ifsm)

Max Junction Temperature (Tj)

Natural Thermal Resistance

Height

REACH SVHC

Number of Terminations

Additional Feature

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Operating Temperature (Max)

Configuration

Power Dissipation-Max

Application

Number of Phases

Non-rep Pk Forward Current-Max

Reverse Current-Max

View Compare
GB02SHT03-46

GeneSiC Semiconductor

18 Weeks

Through Hole

Through Hole

TO-206AB, TO-46-3 Metal Can

3

Bulk

2014

Active

1 (Unlimited)

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

5μA @ 300V

1.6V @ 1A

-55°C~225°C

4A DC

300V

4A

0 s

76pF @ 1V 1MHz

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
GB02SLT12-252

GeneSiC Semiconductor

49 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

Cut Tape (CT)

2015

Active

1 (Unlimited)

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

50μA @ 1200V

1.8V @ 2A

-55°C~175°C

5A DC

1.2kV

5A

0ns

131pF @ 1V 1MHz

RoHS Compliant

PRODUCTION (Last Updated: 6 months ago)

yes

EAR99

175°C

-55°C

8541.10.00.80

127pF

Rectifier Diodes

1

Single

2A

2A

1200V

200nA

1.2kV

200A

175°C

2.3 °C/W

2.385mm

No SVHC

-

-

-

-

-

-

-

-

-

-

-

-

-

-

GB02SHT03-46 vs GB02SLT12-252
GB02SHT06-46

GeneSiC Semiconductor

18 Weeks

Through Hole

Through Hole

TO-206AB, TO-46-3 Metal Can

3

Bulk

2014

Active

1 (Unlimited)

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

5μA @ 600V

1.6V @ 1A

-55°C~225°C

4A DC

600V

4A

0ns

76pF @ 1V 1MHz

RoHS Compliant

-

yes

-

-

-

-

-

-

1

-

-

4A

-

-

-

-

-

-

-

-

2

PD-CASE

BOTTOM

WIRE

NOT SPECIFIED

NOT SPECIFIED

O-MBCY-W2

210°C

SINGLE

64W

EFFICIENCY

1

10A

5μA

GB02SHT03-46 vs GB02SHT06-46
GB02SHT01-46

GeneSiC Semiconductor

18 Weeks

Through Hole

Through Hole

TO-206AB, TO-46-3 Metal Can

3

Bulk

2014

Active

1 (Unlimited)

No Recovery Time > 500mA (Io)

Silicon Carbide Schottky

5μA @ 100V

1.6V @ 1A

-55°C~210°C

4A DC

100V

4A

0ns

76pF @ 1V 1MHz

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

GB02SHT03-46 vs GB02SHT01-46