Fairchild/ON Semiconductor FSB50250S

MOSFET - Intelligent Power Modules (IPM) ROHS
IC, SMART MOSFET MODULE, 500V, 2A; No. of Outputs:3; Output Current:1A; Output Voltage:500V; Supply Voltage Range:13.5V to 16.5V; Driver Case Style:SPM23BA; No. of Pins:23; Operating Temperature Range:-20°C to 150°C; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:1A; Current Id Max:1A; Drain Source Voltage Vds:500V; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-20°C; On Resistance Rds(on):4ohm; Package / Case:SPM23-BA; Power Dissipation Pd:10W; Power Dissipation Pd:10W; Power Dissipation Pd:10W; Pulse Current Idm:2A; Storage Temperature Max:150°C; Storage Temperature Min:-50°C; Supply Voltage Max:20V; Termination Type:SMD; Transistor Case Style:SPM23-BA; Transistor Polarity:N Channel; Transistor Type:MOSFET; Voltage Vds Typ:500V; Voltage Vgs Rds on Measurement:15V
FSB50250S is a Motion SPM® 5 series based on fast-recovery MOSFET (FRFET®) technology as a compact inverter solution for small power motor drive applications such as fans and pumps. It is composed of six FRFET MOSFETs and three half-bridge gate drive HVICs. FSB50250S provides low electromagnetic interference (EMI) characteristics with optimized switching speed. Moreover, since it employs MOSFET as a power switch, it has greater ruggedness and a larger safe operating area (SOA) than IGBT-based power modules. The package is optimized for thermal performance and compactness for use in applications where space is limited. FSB50250S is the right solution for inverters requiring energy efficiency, compactness, and low electromagnetic interference.