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FOD817A More Descriptions
Optocoupler DC-IN 1-Channel Transistor DC-Output 4-Pin PDIP Black Box
70V 5000V 50mA 0.1V@1mA,20mA 1 6V 1.2V DC PDIP-4 Optocouplers - Phototransistor Output ROHS
DIP4 Through Hole Single Channel 70 V 5000 Vrms Phototransistor Optocoupler
Transistor Output Optocoupler, 1-Element, 5000V Isolation
No. Of Channels:1 Channel; Optocoupler Case Style:Dip; No. Of Pins:4Pins; Forward Current If Max:50Ma; Isolation Voltage:5Kv; Ctr Min:80%; Collector Emitter Voltage V(Br)Ceo:70V; Product Range:-; Input Current:50Ma Rohs Compliant: Yes |Onsemi FOD817A.
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
70V 5000V 50mA 0.1V@1mA,20mA 1 6V 1.2V DC PDIP-4 Optocouplers - Phototransistor Output ROHS
DIP4 Through Hole Single Channel 70 V 5000 Vrms Phototransistor Optocoupler
Transistor Output Optocoupler, 1-Element, 5000V Isolation
No. Of Channels:1 Channel; Optocoupler Case Style:Dip; No. Of Pins:4Pins; Forward Current If Max:50Ma; Isolation Voltage:5Kv; Ctr Min:80%; Collector Emitter Voltage V(Br)Ceo:70V; Product Range:-; Input Current:50Ma Rohs Compliant: Yes |Onsemi FOD817A.
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
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