GC FJY4013R technical specifications, attributes, parameters and parts with similar specifications to GC FJY4013R.
- Voltage - Collector Emitter Breakdown (Max):50V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
- Transistor Type:PNP - Pre-Biased
- Supplier Device Package:SOT-523F
- Series:-
- Resistor - Emitter Base (R2):47 kOhms
- Resistor - Base (R1):2.2 kOhms
- Power - Max:200mW
- Packaging:Tape & Reel (TR)
- Package / Case:SC-89, SOT-490
- Other Names:FJY4013RTR
- Mounting Type:Surface Mount
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Lead Free Status / RoHS Status:Lead free / RoHS Compliant
- Frequency - Transition:200MHz
- Detailed Description:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount SOT-523F
- DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
- Current - Collector Cutoff (Max):100nA (ICBO)
- Current - Collector (Ic) (Max):100mA
- Base Part Number:FJY4013
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FJY4013R More Descriptions
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount SOT-523F
TRANSISTOR, DIGITAL PNP SOT-523F; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 68hFE; Trans
Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:-50V; Continuous Collector Current, Ic:-100mA; Collector Emitter Saturation Voltage, Vce(sat):-0.3V; Power Dissipation, Pd:200mW ;RoHS Compliant: Yes
TRANSISTOR, DIGITAL PNP SOT-523F; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 68hFE; Trans
Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:-50V; Continuous Collector Current, Ic:-100mA; Collector Emitter Saturation Voltage, Vce(sat):-0.3V; Power Dissipation, Pd:200mW ;RoHS Compliant: Yes
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