GC FJY3010R technical specifications, attributes, parameters and parts with similar specifications to GC FJY3010R.
- Voltage - Collector Emitter Breakdown (Max):40V
- Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
- Transistor Type:NPN - Pre-Biased
- Supplier Device Package:SOT-523F
- Series:-
- Resistor - Base (R1):10 kOhms
- Power - Max:200mW
- Packaging:Cut Tape (CT)
- Package / Case:SC-89, SOT-490
- Other Names:FJY3010RCT
- Mounting Type:Surface Mount
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Lead Free Status / RoHS Status:Lead free / RoHS Compliant
- Frequency - Transition:250MHz
- Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 200mW Surface Mount SOT-523F
- DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
- Current - Collector Cutoff (Max):100nA (ICBO)
- Current - Collector (Ic) (Max):100mA
- Base Part Number:FJY3010
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FJY3010R More Descriptions
SMALL SIGNAL BIPOLAR TRANSISTOR, 0.1A I(C), 40V V(BR)CEO, 1-ELEMENT, NPN, SILICON
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:40V; Continuous Collector Current, Ic:100mA; Collector Emitter Saturation Voltage, Vce(sat):0.3V; Power Dissipation, Pd:200mW ;RoHS Compliant: Yes
TRANSISTOR, DIGITAL NPN SOT-523F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 200mW; DC Collector Current: 100mA; DC Current Gain hFE: 100hFE; Trans
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:40V; Continuous Collector Current, Ic:100mA; Collector Emitter Saturation Voltage, Vce(sat):0.3V; Power Dissipation, Pd:200mW ;RoHS Compliant: Yes
TRANSISTOR, DIGITAL NPN SOT-523F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 200mW; DC Collector Current: 100mA; DC Current Gain hFE: 100hFE; Trans
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