Fairchild/ON Semiconductor FJV4101RMTF
- Part Number:
- FJV4101RMTF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2847256-FJV4101RMTF
- Description:
- TRANS PREBIAS PNP 200MW SOT23-3
- ECAD Model:
-
- Datasheet:
- FJV4101RMTF
Fairchild/ON Semiconductor FJV4101RMTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FJV4101RMTF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- HTS Code8541.21.00.95
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC-50V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-100mA
- Base Part NumberFJV4101
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation200mW
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Pre-Biased
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 10mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage-300mV
- Max Breakdown Voltage50V
- Frequency - Transition200MHz
- Collector Base Voltage (VCBO)-50V
- Emitter Base Voltage (VEBO)-10V
- hFE Min20
- Resistor - Base (R1)4.7 k Ω
- Continuous Collector Current-100mA
- Resistor - Emitter Base (R2)4.7 k Ω
- Height930μm
- Length2.92mm
- Width1.3mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FJV4101RMTF Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet FJV4101RMTF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FJV4101RMTF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet FJV4101RMTF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FJV4101RMTF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
FJV4101RMTF More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-23 T/R - Bulk
PNP Epitaxial Silicon Transistor with Bias Resistor
Bipolar Transistors - Pre-Biased PNP/50V/100mA 4.7K 4.7K
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Pre-Biased "Digital" Transistor,50V V(Br)Ceo,100Ma I(C),Sot-23
PNP Epitaxial Silicon Transistor Product Highlights: Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7KW, R2=4.7KW) Complement to FJV3101R
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-23 T/R - Bulk
PNP Epitaxial Silicon Transistor with Bias Resistor
Bipolar Transistors - Pre-Biased PNP/50V/100mA 4.7K 4.7K
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Pre-Biased "Digital" Transistor,50V V(Br)Ceo,100Ma I(C),Sot-23
PNP Epitaxial Silicon Transistor Product Highlights: Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7KW, R2=4.7KW) Complement to FJV3101R
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
The three parts on the right have similar specifications to FJV4101RMTF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Surface MountTransistor Element MaterialPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationPolarity/Channel TypeView Compare
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FJV4101RMTFSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgTape & Reel (TR)2013e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 18541.21.00.95BIP General Purpose Small Signal-50V200mWDUALGULL WING-100mAFJV41011PNPSingle200mWSWITCHINGPNP - Pre-Biased50V100mA20 @ 10mA 5V100nA ICBO300mV @ 500μA, 10mA50V200MHz-300mV50V200MHz-50V-10V204.7 k Ω-100mA4.7 k Ω930μm2.92mm1.3mmNoRoHS CompliantLead Free-------------- -
-Surface MountTO-236-3, SC-59, SOT-23-3--Tape & Reel (TR)---Obsolete1 (Unlimited)-------------------PNP - Pre-Biased--56 @ 5mA 5V100nA ICBO300mV @ 500μA, 10mA----200MHz---47 kOhms-22 kOhms------SOT-23-3 (TO-236)200mW50V100mA---------
-
-Surface MountTO-236-3, SC-59, SOT-23-3--Tape & Reel (TR)2002--Obsolete1 (Unlimited)-------------------PNP - Pre-Biased--100 @ 1mA 5V100nA ICBO300mV @ 1mA, 10mA----200MHz---47 kOhms--------SOT-23-3200mW40V100mA---------
-
-Surface MountTO-236-3, SC-59, SOT-23-3--Tape & Reel (TR)-e3yesObsolete1 (Unlimited)3-MATTE TIN--BUILT IN BIAS RESISTOR----DUALGULL WING--1---SWITCHINGPNP - Pre-Biased--100 @ 1mA 5V100nA ICBO300mV @ 1mA, 10mA-200MHz--200MHz---4.7 k Ω------ROHS3 Compliant--200mW40V100mAYESSILICON260NOT SPECIFIED3R-PDSO-G3COMMERCIALSINGLE WITH BUILT-IN RESISTORPNP
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