Vishay Semiconductor Diodes Division FESE16DT-E3/45

Name: FESE16DT-E3/45
Brand: Vishay Semiconductor Diodes Division
SKU: 3582076-FESE16DT-E3/45
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FESE16DT-E3/45

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 3582076-FESE16DT-E3/45

Description:: DIODE GEN PURP 200V 16A TO220AC

ECAD Model:

Datasheet:: FESE16DT-E3/45

Specifications

Vishay Semiconductor Diodes Division FESE16DT-E3/45 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division FESE16DT-E3/45.

Factory Lead Time
18 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-2
Diode Element Material
SILICON
Packaging
Tube
Published
2015
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Additional Feature
FREE WHEELING DIODE
HTS Code
8541.10.00.80
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T2
Number of Elements
1
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
10μA @ 200V
Voltage - Forward (Vf) (Max) @ If
975mV @ 16A
Case Connection
CATHODE
Operating Temperature - Junction
-65°C~150°C
Max Surge Current
250A
Application
EFFICIENCY
Max Reverse Voltage (DC)
200V
Average Rectified Current
16A
Number of Phases
1
Reverse Recovery Time
35 ns
Peak Reverse Current
10μA
JEDEC-95 Code
TO-220AC
Capacitance @ Vr, F
175pF @ 4V 1MHz
Reverse Voltage
200V
Recovery Time
35 ns
RoHS Status
ROHS3 Compliant

Description

FESE16DT-E3/45 Overview
Reverse voltage 200V is a reasonable value.For this device, the average rectified current is 16A volts.Phase diode rectifier is possible to use a surge current of maximum value 250A.Based on the data chart, the peak reverse is 10μA.

FESE16DT-E3/45 Features
an average rectified current of 16A volts
the peak reverse is 10μA

FESE16DT-E3/45 Applications
There are a lot of Vishay Semiconductor Diodes Division
FESE16DT-E3/45 applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

FESE16DT-E3/45 More Descriptions

DIODE GEN PURP 200V 16A TO220AC
16A,200V,35Ns,Single Uf Rect

Product Comparison

The three parts on the right have similar specifications to FESE16DT-E3/45.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Operating Temperature - Junction

Max Surge Current

Application

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Reverse Recovery Time

Peak Reverse Current

JEDEC-95 Code

Capacitance @ Vr, F

Reverse Voltage

Recovery Time

RoHS Status

Terminal Position

Reach Compliance Code

Operating Temperature (Max)

Configuration

Output Current-Max

Voltage - DC Reverse (Vr) (Max)

Non-rep Pk Forward Current-Max

Reverse Current-Max

View Compare
FESE16DT-E3/45

Vishay Semiconductor Diodes Division

18 Weeks

Through Hole

Through Hole

TO-220-2

SILICON

Tube

2015

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

MATTE TIN

150°C

-65°C

FREE WHEELING DIODE

8541.10.00.80

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T2

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

10μA @ 200V

975mV @ 16A

CATHODE

-65°C~150°C

250A

EFFICIENCY

200V

16A

1

35 ns

10μA

TO-220AC

175pF @ 4V 1MHz

200V

35 ns

ROHS3 Compliant

-

-

-

-

-

-

-

-

-
FESE8JT-E3/45

Vishay Semiconductor Diodes Division

18 Weeks

Through Hole

Through Hole

TO-220-2

SILICON

Tape & Reel (TR)

2017

-

-

Obsolete

1 (Unlimited)

2

EAR99

-

-

-

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

8541.10.00.80

-

-

R-PSFM-T2

1

-

Fast Recovery =< 500ns, > 200mA (Io)

Standard

10μA @ 600V

1.5V @ 8A

CATHODE

-55°C~150°C

-

EFFICIENCY

600V

8A

1

50 ns

-

TO-220AC

50pF @ 4V 1MHz

-

-

ROHS3 Compliant

SINGLE

unknown

150°C

SINGLE

8A

600V

125A

10μA

FESE16DT-E3/45 vs FESE8JT-E3/45
FESE8HT-E3/45

Vishay Semiconductor Diodes Division

18 Weeks

Through Hole

Through Hole

TO-220-2

SILICON

Tape & Reel (TR)

2017

-

-

Obsolete

1 (Unlimited)

2

EAR99

-

-

-

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

8541.10.00.80

-

-

R-PSFM-T2

1

-

Fast Recovery =< 500ns, > 200mA (Io)

Standard

10μA @ 500V

1.5V @ 8A

CATHODE

-55°C~150°C

-

EFFICIENCY

500V

8A

1

50 ns

-

TO-220AC

50pF @ 4V 1MHz

-

-

ROHS3 Compliant

SINGLE

unknown

150°C

SINGLE

8A

500V

125A

10μA

FESE16DT-E3/45 vs FESE8HT-E3/45
FESE8GT-E3/45

Vishay Semiconductor Diodes Division

18 Weeks

Through Hole

Through Hole

TO-220-2

SILICON

Tube

2013

-

-

Obsolete

1 (Unlimited)

2

EAR99

-

150°C

-55°C

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

8541.10.00.80

-

-

R-PSFM-T2

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

10μA @ 400V

1.3V @ 8A

CATHODE

-55°C~150°C

125A

EFFICIENCY

400V

8A

1

50 ns

10μA

TO-220AC

85pF @ 4V 1MHz

400V

50 ns

ROHS3 Compliant

-

unknown

-

-

8A

-

-

-

FESE16DT-E3/45 vs FESE8GT-E3/45