Vishay Semiconductor Diodes Division FES8DT-E3/45
- Part Number:
- FES8DT-E3/45
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 2424565-FES8DT-E3/45
- Description:
- DIODE GEN PURP 200V 8A TO220AC
- ECAD Model:
-
- Datasheet:
- FES(F,B)8AT - 8JT
Vishay Semiconductor Diodes Division FES8DT-E3/45 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division FES8DT-E3/45.
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-2
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingTube
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureFREE WHEELING DIODE, LOW LEAKAGE CURRENT
- HTS Code8541.10.00.80
- SubcategoryRectifier Diodes
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeStandard
- Current - Reverse Leakage @ Vr10μA @ 200V
- Voltage - Forward (Vf) (Max) @ If950mV @ 8A
- Case ConnectionCATHODE
- Forward Current8A
- Operating Temperature - Junction-55°C~150°C
- Max Surge Current125A
- Output Current-Max8A
- ApplicationEFFICIENCY
- Forward Voltage950mV
- Max Reverse Voltage (DC)200V
- Average Rectified Current8A
- Number of Phases1
- Reverse Recovery Time35 ns
- Peak Reverse Current10μA
- Max Repetitive Reverse Voltage (Vrrm)200V
- Peak Non-Repetitive Surge Current125A
- Reverse Voltage200V
- Max Forward Surge Current (Ifsm)125A
- Recovery Time35 ns
- Height8.89mm
- Length10.54mm
- Width4.7mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FES8DT-E3/45 Overview
A reasonable reverse voltage is 200V.The average rectified current for this device is 8A volts.When the forward current reaches 8A, it is allowed.The maximum surge current is 125A.As far as output current is concerned, 8A is the maximum.A data chart shows that the peak reverse is 10μA in the datasheets.
FES8DT-E3/45 Features
an average rectified current of 8A volts
8A is the maximum value
the peak reverse is 10μA
FES8DT-E3/45 Applications
There are a lot of Vishay Semiconductor Diodes Division
FES8DT-E3/45 applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
A reasonable reverse voltage is 200V.The average rectified current for this device is 8A volts.When the forward current reaches 8A, it is allowed.The maximum surge current is 125A.As far as output current is concerned, 8A is the maximum.A data chart shows that the peak reverse is 10μA in the datasheets.
FES8DT-E3/45 Features
an average rectified current of 8A volts
8A is the maximum value
the peak reverse is 10μA
FES8DT-E3/45 Applications
There are a lot of Vishay Semiconductor Diodes Division
FES8DT-E3/45 applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
FES8DT-E3/45 More Descriptions
8 A 200 V 35 ns Flange Mount Plastic Ultrafast Rectifier - TO-220AC
Diode Switching 200V 8A 2-Pin(2 Tab) TO-220AC Tube
Ultra Fast Recovery Power Rectifier; Repetitive Reverse Voltage Max, Vrrm:200V; Current Rating:8A; Features:Ultrafast Recovery; Forward Current:8A; Leaded Process Compatible:Yes; Package/Case:TO-220AC; Mounting Type:Through Hole ;RoHS Compliant: Yes
Diode Switching 200V 8A 2-Pin(2 Tab) TO-220AC Tube
Ultra Fast Recovery Power Rectifier; Repetitive Reverse Voltage Max, Vrrm:200V; Current Rating:8A; Features:Ultrafast Recovery; Forward Current:8A; Leaded Process Compatible:Yes; Package/Case:TO-220AC; Mounting Type:Through Hole ;RoHS Compliant: Yes
The three parts on the right have similar specifications to FES8DT-E3/45.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsDiode Element MaterialPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryPin CountNumber of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfCase ConnectionForward CurrentOperating Temperature - JunctionMax Surge CurrentOutput Current-MaxApplicationForward VoltageMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesReverse Recovery TimePeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Peak Non-Repetitive Surge CurrentReverse VoltageMax Forward Surge Current (Ifsm)Recovery TimeHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackageCapacitanceVoltage - Rated DCCurrent RatingPolarityOutput CurrentVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)View Compare
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FES8DT-E3/4520 WeeksThrough HoleThrough HoleTO-220-22SILICONTube2009e3yesActive1 (Unlimited)2EAR99Matte Tin (Sn)150°C-55°CFREE WHEELING DIODE, LOW LEAKAGE CURRENT8541.10.00.80Rectifier Diodes31SingleFast Recovery =< 500ns, > 200mA (Io)Standard10μA @ 200V950mV @ 8ACATHODE8A-55°C~150°C125A8AEFFICIENCY950mV200V8A135 ns10μA200V125A200V125A35 ns8.89mm10.54mm4.7mmNoROHS3 CompliantLead Free--------- -
-Through HoleThrough HoleTO-220-22-Tube2008--Obsolete1 (Unlimited)---150°C-55°C-----SingleFast Recovery =< 500ns, > 200mA (Io)Standard10μA @ 200V950mV @ 8A-8A-55°C~150°C125A---200V8A-35 ns10μA200V-200V125A35 ns15.3162mm10.5156mm4.699mm-Non-RoHS CompliantContains LeadTO-220AC85pF200V8AStandard8A200V8A
-
20 WeeksThrough HoleThrough HoleTO-220-22SILICONTube2011e3yesObsolete1 (Unlimited)2EAR99Matte Tin (Sn)150°C-55°CFREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT8541.10.00.80Rectifier Diodes31SingleFast Recovery =< 500ns, > 200mA (Io)Standard10μA @ 200V950mV @ 8ACATHODE8A-55°C~150°C125A8AEFFICIENCY-200V8A135 ns10μA200V125A200V-35 ns---NoROHS3 Compliant---------
-
20 WeeksThrough HoleThrough HoleTO-220-22SILICONTube2011e3yesObsolete1 (Unlimited)2EAR99Matte Tin (Sn)150°C-55°CFREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT8541.10.00.80Rectifier Diodes31SingleFast Recovery =< 500ns, > 200mA (Io)Standard10μA @ 600V1.5V @ 8ACATHODE8A-55°C~150°C125A8AEFFICIENCY-600V8A150 ns10μA600V125A600V-50 ns---NoROHS3 Compliant---------
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