FAI FDT86113LZ
- Part Number:
- FDT86113LZ
- Manufacturer:
- FAI
- Ventron No:
- 6156400-FDT86113LZ
- Description:
- Datasheet:
- FDT86113LZ
FAI FDT86113LZ technical specifications, attributes, parameters and parts with similar specifications to FAI FDT86113LZ.
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Vgs (Max):±20V
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-223-4
- Series:PowerTrench®
- Rds On (Max) @ Id, Vgs:100 mOhm @ 3.3A, 10V
- Power Dissipation (Max):2.2W (Ta)
- Packaging:Tape & Reel (TR)
- Package / Case:TO-261-4, TO-261AA
- Other Names:FDT86113LZ-ND
FDT86113LZTR - Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Manufacturer Standard Lead Time:25 Weeks
- Lead Free Status / RoHS Status:Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds:315pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs:6.8nC @ 10V
- FET Type:N-Channel
- FET Feature:-
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Drain to Source Voltage (Vdss):100V
- Detailed Description:N-Channel 100V 3.3A (Tc) 2.2W (Ta) Surface Mount SOT-223-4
- Current - Continuous Drain (Id) @ 25°C:3.3A (Tc)
part No. FDT86113LZ Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
FDT86113LZ More Descriptions
Trans MOSFET N-CH 100V 3.3A 4-Pin(3 Tab) SOT-223 T/R / MOSFET N-CH 100V 3.3A SOT223
N-Channel 100 V 0.1 ohm Surface Mount PowerTrench Mosfet - SOT-223
Transistor, Single, N-channel, PowerTrench MOSFET, 100V, 3.3A, SOT-223 | ON Semiconductor FDT86113LZ
N-Channel PowerTrench® MOSFET 100V, 3.3A, 100mΩ
MOSFET, N CH, 100V, 3.3A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:2.5V
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
N-Channel 100 V 0.1 ohm Surface Mount PowerTrench Mosfet - SOT-223
Transistor, Single, N-channel, PowerTrench MOSFET, 100V, 3.3A, SOT-223 | ON Semiconductor FDT86113LZ
N-Channel PowerTrench® MOSFET 100V, 3.3A, 100mΩ
MOSFET, N CH, 100V, 3.3A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:2.5V
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
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