FDT86113LZ

FAI FDT86113LZ

Part Number:
FDT86113LZ
Manufacturer:
FAI
Ventron No:
6156400-FDT86113LZ
Description:
ECAD Model:
Datasheet:
FDT86113LZ

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Specifications
FAI FDT86113LZ technical specifications, attributes, parameters and parts with similar specifications to FAI FDT86113LZ.
  • Vgs(th) (Max) @ Id:
    2.5V @ 250µA
  • Vgs (Max):
    ±20V
  • Technology:
    MOSFET (Metal Oxide)
  • Supplier Device Package:
    SOT-223-4
  • Series:
    PowerTrench®
  • Rds On (Max) @ Id, Vgs:
    100 mOhm @ 3.3A, 10V
  • Power Dissipation (Max):
    2.2W (Ta)
  • Packaging:
    Tape & Reel (TR)
  • Package / Case:
    TO-261-4, TO-261AA
  • Other Names:
    FDT86113LZ-ND
    FDT86113LZTR
  • Operating Temperature:
    -55°C ~ 150°C (TJ)
  • Mounting Type:
    Surface Mount
  • Moisture Sensitivity Level (MSL):
    1 (Unlimited)
  • Manufacturer Standard Lead Time:
    25 Weeks
  • Lead Free Status / RoHS Status:
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds:
    315pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs:
    6.8nC @ 10V
  • FET Type:
    N-Channel
  • FET Feature:
    -
  • Drive Voltage (Max Rds On, Min Rds On):
    4.5V, 10V
  • Drain to Source Voltage (Vdss):
    100V
  • Detailed Description:
    N-Channel 100V 3.3A (Tc) 2.2W (Ta) Surface Mount SOT-223-4
  • Current - Continuous Drain (Id) @ 25°C:
    3.3A (Tc)
Description
part No. FDT86113LZ Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
FDT86113LZ More Descriptions
Trans MOSFET N-CH 100V 3.3A 4-Pin(3 Tab) SOT-223 T/R / MOSFET N-CH 100V 3.3A SOT223
N-Channel 100 V 0.1 ohm Surface Mount PowerTrench Mosfet - SOT-223
Transistor, Single, N-channel, PowerTrench MOSFET, 100V, 3.3A, SOT-223 | ON Semiconductor FDT86113LZ
N-Channel PowerTrench® MOSFET 100V, 3.3A, 100mΩ
MOSFET, N CH, 100V, 3.3A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:2.5V
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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