Fairchild/ON Semiconductor FDS8878

Name: FDS8878
Brand: Fairchild/ON Semiconductor
SKU: 2848598-FDS8878
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS8878

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2848598-FDS8878

Description:: MOSFET N-CH 30V 10.2A 8SOIC

ECAD Model:

Datasheet:: FDS8878

Specifications

Fairchild/ON Semiconductor FDS8878 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8878.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
18 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2001
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
14MOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
10.2A
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
14m Ω @ 10.2A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
897pF @ 15V
Current - Continuous Drain (Id) @ 25°C
10.2A Ta
Gate Charge (Qg) (Max) @ Vgs
26nC @ 10V
Rise Time
29ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
18 ns
Turn-Off Delay Time
45 ns
Continuous Drain Current (ID)
10.2A
Threshold Voltage
2.5V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Avalanche Energy Rating (Eas)
57 mJ
Nominal Vgs
2.5 V
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS8878 Description
With either synchronous or traditional switching PWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. Low gate charge, low rDS(on), and quick switching speed have all been optimized for.

FDS8878 Features
rDS(on) = 14m?, VGS = 10V, ID = 10.2A
rDS(on) = 17m?, VGS = 4.5V, ID = 9.3A
High-performance trench technology for extremely low rDS(on)
Low gate charge
High power and current handling capability
RoHS Compliant

FDS8878 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

FDS8878 More Descriptions

N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Certification