Fairchild/ON Semiconductor FDS8817NZ

Name: FDS8817NZ
Brand: Fairchild/ON Semiconductor
SKU: 2481762-FDS8817NZ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS8817NZ

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2481762-FDS8817NZ

Description:: MOSFET N-CH 30V 15A 8-SOIC

ECAD Model:

Datasheet:: FDS8817NZ

Specifications

Fairchild/ON Semiconductor FDS8817NZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8817NZ.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2400pF @ 15V
Current - Continuous Drain (Id) @ 25°C
15A Ta
Gate Charge (Qg) (Max) @ Vgs
45nC @ 10V
Rise Time
13ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
15A
Threshold Voltage
1.8V
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.007Ohm
Drain to Source Breakdown Voltage
30V
Nominal Vgs
1.8 V
Feedback Cap-Max (Crss)
300 pF
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description
The FDS8817NZ is a 30V, 15A, 7.0m N-Channel PowerTrench? MOSFET. This N-Channel MOSFET is made with ON Semiconductor's innovative PowerTrench? process, which has been tweaked to reduce on-state resistance. This device is ideal for Power Management and loads switching applications, which are popular in notebook computers and portable battery packs.

Features
● VGS = 10V, ID = 15A, max rDS(on) = 7mΩ ● VGS = 4.5V, ID =12.6A, max rDS(on) = 10mΩ
● A typical ESD protection level for HBM is 3.8KV
● Extremely low rDS with high-performance trench technology (on)
● Capability to handle high power and current
● Compliant with RoHS

Applications
● High side switch ● Radio frequency applications ● Passive elements like resistor, capacitor and inductor ● DC motors ● Chopper circuits

FDS8817NZ More Descriptions

N-Channel 30 V 7 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
N-Channel PowerTrench® MOSFET 30V, 15A, 7.0mΩ
N CHANNEL MOSFET, 30V, 15A, SOIC; Transi; N CHANNEL MOSFET, 30V, 15A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V
This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Certification