Fairchild/ON Semiconductor FDP085N10A_F102

Name: FDP085N10A_F102
Brand: Fairchild/ON Semiconductor
SKU: 2481062-FDP085N10A_F102
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDP085N10A_F102

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2481062-FDP085N10A_F102

Description:: MOSFET N-CH 100V 96A TO-220-3

ECAD Model:

Datasheet:: FDP085N10A_F102

Specifications

Fairchild/ON Semiconductor FDP085N10A_F102 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP085N10A_F102.

Vgs(th) (Max) @ Id:
4V @ 250µA
Vgs (Max):
±20V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
TO-220-3
Series:
PowerTrench®
Rds On (Max) @ Id, Vgs:
8.5 mOhm @ 96A, 10V
Power Dissipation (Max):
188W (Tc)
Packaging:
Tube
Package / Case:
TO-220-3
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Input Capacitance (Ciss) (Max) @ Vds:
2695pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
96A (Tc)

Description

Images are for reference only.See Product Specifications for product details.If you are interested to buy FDP085N10A_F102.

FDP085N10A_F102 More Descriptions

Trans MOSFET N-CH 100V 96A 3-Pin(3 Tab) TO-220 Tube
Power Field-Effect Transistor, 96A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to FDP085N10A_F102.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

region:

Shipment :

Distributor:

Contact Email:

Condition:

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Reach Compliance Code

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

View Compare
FDP085N10A_F102

Fairchild/ON Semiconductor

4V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-220-3

PowerTrench®

8.5 mOhm @ 96A, 10V

188W (Tc)

Tube

TO-220-3

-55°C ~ 175°C (TJ)

Through Hole

2695pF @ 50V

40nC @ 10V

N-Channel

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10V

100V

96A (Tc)

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FAIRCHILD

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TO220

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FDP047N08

FAIRCHILD

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ACTIVE (Last Updated: 2 days ago)

5 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~175°C TJ

Tube

PowerTrench®

2004

e3

yes

Active

1 (Unlimited)

3

EAR99

4.7MOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

1

268W Tc

Single

ENHANCEMENT MODE

268W

100 ns

N-Channel

SWITCHING

4.7m Ω @ 80A, 10V

4.5V @ 250μA

9415pF @ 25V

164A Tc

152nC @ 10V

147ns

10V

±20V

114 ns

220 ns

164A

TO-220AB

20V

75V

656A

670 mJ

3.5 V

16.51mm

10.67mm

4.83mm

No SVHC

No

ROHS3 Compliant

Lead Free

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FDP085N10A_F102 vs FDP047N08
FDP085N10A

FSC

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Through Hole

TO-220-3

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-55°C~175°C TJ

Tube

PowerTrench®

2013

-

yes

Obsolete

1 (Unlimited)

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FET General Purpose Power

MOSFET (Metal Oxide)

-

188W Tc

-

ENHANCEMENT MODE

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N-Channel

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8.5m Ω @ 96A, 10V

4V @ 250μA

2695pF @ 50V

96A Tc

40nC @ 10V

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10V

±20V

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NO

compliant

Single

100V

96A

FDP085N10A_F102 vs FDP085N10A