Fairchild/ON Semiconductor FDMS7570S

Name: FDMS7570S
Brand: Fairchild/ON Semiconductor
SKU: 2481965-FDMS7570S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS7570S

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2481965-FDMS7570S

Description:: MOSFET N-CH 25V 28A POWER56

ECAD Model:

Datasheet:: FDMS7570S

Specifications

Fairchild/ON Semiconductor FDMS7570S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS7570S.

Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
90mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®, SyncFET™
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Power Dissipation-Max
2.5W Ta 83W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
Turn On Delay Time
14 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.95m Ω @ 28A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
4515pF @ 13V
Current - Continuous Drain (Id) @ 25°C
28A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs
69nC @ 10V
Rise Time
5.9ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
4 ns
Turn-Off Delay Time
34 ns
Continuous Drain Current (ID)
49A
JEDEC-95 Code
MO-240AA
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
25V
Nominal Vgs
1.7 V
Height
1.05mm
Length
5mm
Width
6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

FDMS7570S Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4515pF @ 13V.This device conducts a continuous drain current (ID) of 49A, which is the maximum continuous current transistor can conduct.Using VGS=25V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 25V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 34 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

FDMS7570S Features
a continuous drain current (ID) of 49A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 34 ns

FDMS7570S Applications
There are a lot of ON Semiconductor
FDMS7570S applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

FDMS7570S More Descriptions

Trans MOSFET N-CH Si 25V 28A 8-Pin PQFN EP T/R
Power Field-Effect Transistor, 28A I(D), 25V, 0.00195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

Product Comparison

The three parts on the right have similar specifications to FDMS7570S.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Threshold Voltage

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
FDMS7570S

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

10 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

90mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

2009

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

R-PDSO-F5

1

2.5W Ta 83W Tc

Single

ENHANCEMENT MODE

2.5W

DRAIN

14 ns

N-Channel

SWITCHING

1.95m Ω @ 28A, 10V

3V @ 1mA

4515pF @ 13V

28A Ta 49A Tc

69nC @ 10V

5.9ns

4.5V 10V

±20V

4 ns

34 ns

49A

MO-240AA

20V

25V

1.7 V

1.05mm

5mm

6mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDMS86105

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

13 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

68.1mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

R-PDSO-F5

1

2.5W Ta 48W Tc

Single

ENHANCEMENT MODE

48W

DRAIN

6.7 ns

N-Channel

SWITCHING

34m Ω @ 6A, 10V

4V @ 250μA

645pF @ 50V

6A Ta 26A Tc

11nC @ 10V

2.1ns

6V 10V

±20V

2.4 ns

12 ns

6A

MO-240AA

20V

100V

-

1.05mm

5mm

6mm

No SVHC

No

ROHS3 Compliant

2.8V

6A

0.034Ohm

30A

50 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDMS7570S vs FDMS86105
FDMS36101L_F085

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3V @ 250µA

±20V

MOSFET (Metal Oxide)

8-PQFN (5x6), Power56

Automotive, AEC-Q101, PowerTrench®

26 mOhm @ 20A, 10V

94W (Tc)

Tape & Reel (TR)

8-PowerTDFN

-55°C ~ 175°C (TJ)

Surface Mount

3945pF @ 25V

84nC @ 10V

N-Channel

-

4.5V, 10V

100V

38A (Tc)

FDMS7570S vs FDMS36101L_F085
FDMS86381_F085

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

±20V

MOSFET (Metal Oxide)

Power56

Automotive, AEC-Q101, PowerTrench®

22 mOhm @ 30A, 10V

50W (Tj)

Tape & Reel (TR)

8-PowerTDFN

-55°C ~ 175°C (TJ)

Surface Mount

866pF @ 40V

21nC @ 10V

N-Channel

-

10V

80V

30A (Tc)

FDMS7570S vs FDMS86381_F085

Certification

Related parts for FDMS7570S

FDMS3606AS

VB
FDMS7658AS

FSC

ORIGINAL IN STOCK
FDMS7660

FAIRCHIL

ORIGINAL IN STOCK
FDMS3620S

FAIRCHILD

original in stock
FDMS3604AS

FAIRCHILD

original in stock
FDMS0312AS

FAIRCHILD

original in stock
FDMS3604AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/23A 8-PQFN
FDMS86105

Fairchild/ON Semiconductor

MOSFET N-CH 100V POWER56
FDMS36101L_F085

Fairchild/ON Semiconductor

MOSFET N-CH 100V 38A 8-MLP
FDMS86381_F085

Fairchild/ON Semiconductor

POWER TRENCH MOSFET

Popular Search Part Number Related Keywords Search Tags

FDMS7570S Price
FDMS7570S Picture
FDMS7570S Buy
FDMS7570S Distributor
FDMS7570S Image
FDMS7570S Inquiry
FDMS7570S Manufacturer
FDMS7570S Part
FDMS7570S Description
FDMS7570S Technical Data
FDMS7570S Stock
FDMS7570S Wholesales
FDMS7570S PDF
FDMS7570S Inventory
FDMS7570S Supplier
FDMS7570S Datasheet
FDMS7570S Rfq
FDMS7570S Specification

FDMS757~~(2)~~
FDMS75~~(5)~~
FDMS7~~(51)~~
FDMS~~(70)~~
FDM~~(86)~~

Part Number	Manufacturers	Description	Stock	Price
FDMS7570S DISTI #	ON Semiconductor	PT7 25V/20V NCH POWERTRENCH SY	2335	1 $1.023 10 $0.8928 100 $0.7149 500 $0.6425 1000 $0.6172
FDMS7570S DISTI #	ON Semiconductor	MOSFET N-CH 25V 28A POWER56 RoHS: Compliant	5394	1 $1.37 10 $1.212 100 $0.9577 500 $0.74268 1000 $0.58633
FDMS7570S DISTI #	ON Semiconductor	MOSFET N-CH 25V 28A POWER56 RoHS: Compliant	5394	1 $1.37 10 $1.212 100 $0.9577 500 $0.74268 1000 $0.58633
FDMS7570S DISTI #	ON Semiconductor	MOSFET N-CH 25V 28A POWER56 RoHS: Compliant	3000	3000 $0.5313
FDMS7570S DISTI #	ON Semiconductor	PT7 25V/20V NCH POWERTRENCH SY	2335	9 $1.023 10 $0.8928 100 $0.7149 500 $0.6425
FDMS7570S DISTI #	ON Semiconductor	Trans MOSFET N-CH 25V 30A 8-Pin Power 56 T/R - Tap RoHS: Compliant	12000	3000 $0.4719 6000 $0.4599 12000 $0.4479 18000 $0.4359 30000 $0.4249
FDMS7570S DISTI #	ON Semiconductor	Trans MOSFET N-CH 25V 30A 8-Pin Power 56 T/R (Alt: RoHS: Compliant	0	3000 $0.42228 6000 $0.40604 9000 $0.391 15000 $0.37704 30000 $0.36403 75000 $0.3519 150000 $0.34613
FDMS7570S DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 28A I(D), 25V, 0.00 RoHS: Compliant	28397	1 $0.69 25 $0.64 100 $0.61 500 $0.59 1000 $0.56
FDMS7570S DISTI #	ON Semiconductor	MOSFET 25V N-Channel PowerTrench SyncFET RoHS: Compliant	2450	1 $1.14 10 $0.966 100 $0.742 500 $0.656 1000 $0.518 3000 $0.459 9000 $0.442
FDMS7570S DISTI #	ON Semiconductor	Trans MOSFET N-CH Si 25V 30A 8-Pin PQFN EP T/R RoHS: Compliant	2335	10 $0.909 500 $0.6425 1000 $0.622

Fairchild/ON Semiconductor FDMS7570S

Quick Request Quote

What Is CD4017BE CMOS Counter And How It Works?

Get to Know the MOC3063 Triac Driver

TIP122 Darlington Transistor: Symbol, Features, Applications and More

LM3900N Quadruple Operational Amplifier: Equivalent, Working Principle and LM3900N vs LM3900DR